Influence of Humidity, Volume Density, and MgO Impurity on Mg2Si Thermoelectric-Leg

Mito, Youhiko; Ogino, Akihiro; Konno, Shu; Udono, Haruhiko

doi:10.1007/s11664-016-5182-1

Cited by 4 publications

(1 citation statement)

References 14 publications

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“…In particular, thermal oxidation resistance of the material affects directly on the thermoelectric performance and mechanical strength of thermoelectric generators (TEGs). However, the reports on oxidation resistance of Mg2Si crystal are limited, so far [4,11,12].…”

Section: Introductionmentioning

confidence: 99%

Oxidation resistance of impurity doped Mg<sub>2</sub>Si grown from the melt

et al. 2017

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We have investigated oxidation resistance of melt grown Mg2Si crystals doped with Sb or Bi impurity by thermal annealing above 600°C, large difference of oxidation speed was observed in the Sb-doped, Bi-doped and non-doped Mg2Si crystals. The sample weight of Bi-doped and non-doped Mg2Si increased about 128% and 104%, respectively, while that of Sb-doped one unchanged after thermal annealing at 650°C for 6h. TG/DTA analysis also revealed the changing of oxidation speed and reaction temperature in the Sb-doped, Bi-doped and non-doped Mg2Si crystals. These results indicate that Sb-dopant improves the oxidation resistance whereas Bi-dopant deteriorates the oxidation resistance of Mg2Si.

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Section: Introductionmentioning

confidence: 99%

Oxidation resistance of impurity doped Mg<sub>2</sub>Si grown from the melt

et al. 2017

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Fabrication of Nickel Contacts for Mg2Si Based Thermoelectric Generators via an Induction Assisted Rapid Monoblock Sintering Technique

Mitra

Mahapatra

Dasgupta

2019

Journal of Elec Materi

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Silicon meets group-II metals in energy and electronic applications—How to handle reactive sources for high-quality films and bulk crystals

Suemasu

Hara

Udono

et al. 2022

Journal of Applied Physics

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In the present advanced information society, the group IV element Si is inevitably used for various high-performance devices, such as transistors and solar cells. When Si meets group-II elements such as Mg, Ca, Sr, or Ba, semiconducting silicides are formed, which are applicable to energy conversion devices such as thin-film solar cells and thermoelectric devices. In this Tutorial, we focus on two representative typical semiconducting silicides among them: Mg2Si and BaSi2 composed of earth-abundant elements. Mg2Si has been extensively studied for light-weight high-performance thermoelectric devices, whereas BaSi2 has been studied for thin-film solar cells, and recently has also been attracting attention as a thermoelectric material. However, these group-II elements are highly reactive with oxygen and water. Thus, we need to be careful when handling these elements. In this Tutorial, we provide guidance on how to handle these group-II elements and their compounds in an easy-to-understand manner for beginners. In addition, we introduce thin-film growth and bulk growth techniques, as well as the points to be considered when characterizing these materials.

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Influence of Humidity, Volume Density, and MgO Impurity on Mg2Si Thermoelectric-Leg

Cited by 4 publications

References 14 publications

Oxidation resistance of impurity doped Mg<sub>2</sub>Si grown from the melt

Oxidation resistance of impurity doped Mg<sub>2</sub>Si grown from the melt

Fabrication of Nickel Contacts for Mg2Si Based Thermoelectric Generators via an Induction Assisted Rapid Monoblock Sintering Technique

Silicon meets group-II metals in energy and electronic applications—How to handle reactive sources for high-quality films and bulk crystals

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