2014
DOI: 10.1016/j.jallcom.2013.10.221
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Influence of film thickness and In-doping on physical properties of CdS thin films

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Cited by 63 publications
(22 citation statements)
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“…It is found that with increasing thickness, the value of resistivity decreases. The resistivity is related to grain size or dislocation density which corresponds to presence of more defects in the sample [21,22]. A sample having low grain size or having high value of dislocation density shows high value of resistivity.…”
Section: Electrical Propertiesmentioning
confidence: 99%
“…It is found that with increasing thickness, the value of resistivity decreases. The resistivity is related to grain size or dislocation density which corresponds to presence of more defects in the sample [21,22]. A sample having low grain size or having high value of dislocation density shows high value of resistivity.…”
Section: Electrical Propertiesmentioning
confidence: 99%
“…The copper indium gallium diselenide/sulphide (CIGS), CdTe, and CuInSe 2 / sulphide can form the heterojunction photovoltaic cell with cadmium sulphide [7] . Doping impurity elements like indium, aluminum, gallium, and boron can promote the optical and electronic characteristics of CdS [8][9][10][11] . Also, CdSe doped with different elements for obtaining p-type CdSe or high n-type CdSe carrier concentrations such as CdSe:Sb [12] , CdSe doping with Er 3+ [13] , CdSe doping with indium [14] and Ni doping [15] .…”
Section: Introductionmentioning
confidence: 99%
“…CdS is an n-type potential window layer material in CdTe 7 based solar cells, with energy band gap of 2.42 eV 10 . Many techniques have been used to synthesize CdS thin films including chemical vapour deposition (CVD) 11 and physical vapour deposition (PVD), chemical bath deposition (CBD) 12 , thermal evaporation 13 , pulsed laser 14 and close spaced sublimation (CSS) techniques 15 . Encouraging results have been attained by using CSS technique for the second generation based solar cells 16 .…”
Section: Introductionmentioning
confidence: 99%