Influence of crystal growth conditions   and carbothermal treatment on activator charge state in Ti:sapphire

Nizhankovskiy, S. V.

doi:10.15407/fm25.02.208

Cited by 1 publication

(2 citation statements)

References 11 publications

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“…The latter is connected with the low total equilibrium concentration of Ti at these points. This conclusion is in agreement with experimental study [30] where it was shown that thermal carbon treatment of raw materials (Al 2 O 3 and TiO 2 ) makes it possible to decrease the concentration of Ti 4+ in Ti:Al 2 O 3 crystals. With this, Fig.…”

Section: Influence Of Co-doping On Fomsupporting

confidence: 92%

“…The latter is connected with the low total equilibrium concentration of Ti at these points. This conclusion is in agreement with experimental study [30] where it was shown that thermal carbon treatment of raw materials (Al It is instructive to evaluate the relation between the FOM and c Ti 3+ /c Ti 3+ −Ti 4+ . To do that we use the data of [13].…”

Section: Influence Of Co-doping On Fomsupporting

confidence: 90%

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Control of charge state of dopants in insulating crystals: Case study of Ti-doped sapphire

Kravchenko

Fil

2020

Phys. Rev. Research

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We study mechanisms of control of charge state and concentration of different point defects in doped insulating crystals. The approach is based on the density functional theory calculations. We apply it to the problem of obtaining of Ti-doped sapphire crystals with high figure-of-merit (FOM). The FOM of a given sample is defined as the ratio of the coefficient of absorption at the pump frequency to the coefficient of absorption at the working frequency of Ti:sapphire laser. It is one of standard specifications of commercial Ti:sapphire laser crystals. It is believed that FOM is proportional to the ratio of the concentration of isolated Ti 3+ ions to the concentration of Ti 3+-Ti 4+ pairs. We find that generally this ratio is in inverse proportion to the concentration of Ti 4+ isolated substitutional defects with the coefficient of proportionality that depends on the temperature at which the thermodynamically equilibrium concentration of defects is reached. We argue that in certain cases the inverse proportion between concentrations of Ti 3+-Ti 4+ and Ti 4+ may be violated. The role of codoping in the control of the charge state of dopants is analyzed. We show that codopants that form positively (negatively) charged defects may decrease (increase) the concentration of positively charged defects formed by the main dopants. To evaluate the effect of codoping it is important to take into account not only isolated defects but defect complexes formed by codopants, as well. In particular, we show that codoping of Ti:sapphire with nitrogen results in an essential increase of the concentration of Ti 4+ and in a decrease of the FOM, and, consequently, growth or annealing in the presence of nitrogen or its compounds is unfavorable for producing Ti:sapphire laser crystals. The approach developed can be used for determining appropriate growth and annealing conditions for obtaining doped crystals with the required characteristics.

show abstract

Section: Influence Of Co-doping On Fomsupporting

confidence: 92%

“…The latter is connected with the low total equilibrium concentration of Ti at these points. This conclusion is in agreement with experimental study [30] where it was shown that thermal carbon treatment of raw materials (Al It is instructive to evaluate the relation between the FOM and c Ti 3+ /c Ti 3+ −Ti 4+ . To do that we use the data of [13].…”

Section: Influence Of Co-doping On Fomsupporting

confidence: 90%

Control of charge state of dopants in insulating crystals: Case study of Ti-doped sapphire

Kravchenko

Fil

2020

Phys. Rev. Research

View full text Add to dashboard Cite

show abstract

Influence of crystal growth conditions and carbothermal treatment on activator charge state in Ti:sapphire

Cited by 1 publication

References 11 publications

Control of charge state of dopants in insulating crystals: Case study of Ti-doped sapphire

Control of charge state of dopants in insulating crystals: Case study of Ti-doped sapphire

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