Influence of Carbon Alloying on the Thermal Stability and Resistive Switching Behavior of Copper-Telluride Based CBRAM Cells

Abstract

We report the improved thermal stability of carbon alloyed Cu0.6Te0.4 for resistive memory applications. Copper-tellurium-based memory cells show enhanced switching behavior, but the complex sequence of phase transformations upon annealing is disadvantageous for integration in a device. We show that addition of about 40 at % carbon to the Cu-telluride layer results in an amorphous material up to 360 °C. This material was then integrated in a TiN/Cu0.6Te0.4-C/Al2O3/Si resistive memory cell, and compared to pure Cu0.6Te0.4. Very attractive endurance (up to 1 × 10(3) cycles) and retention properties (up to 1 × 10(4) s at 85 °C) are observed. The enhanced thermal stability and good switching behavior make this material a promising candidate for integration in memory devices.

Unipolar resistive switching with forming-free and self-rectifying effects in Cu/HfO2/n-Si devices

“…Though there is some fluctuation for R HRS , and yet R LRS is quite stable, the OFF/ON ratio is still more than 2 × 10 3 with no destructive degeneration as time progresses, reflecting an excellent retention performance at 85 • C. What should be mentioned is that the stability of HRS resistance can be improved through optimizing the device structure (i.e. nanoparticle implanted in dielectric 32 or alloy electrode applied 33 ) to obtain more outstanding resistive switching window. We also notice that the R LRS stayed at ∼10 4 Ω all the way, and the maximum current is as low as 100 µA, signifying the potential for low power consumption integrated application.…”

Effect of nitrogen-doped GST buffer layer on switching characteristics of conductive-bridging RAM

“…Nitrogen doping was also confIrmed with a N Is peak [14]. The Cu 2p3/2 peak (�933 eV) was shifted from the pure and oxidized Cu 2p3/2 peak, which is attributed to Cu-Te bonding formation [15], [16]. Fig.…”

Filamentary-Based Resistive Switching

“…Their fabrication is achieved by using sputtering, physical vapor deposition (PVD) techniques or chemical vapor deposition (CVD). For example, Cu has been alloyed with Te in a combinatorial co-sputtering approach [30,31]. The impact of Cu and Te composition on the RS has been investigated and an optimal composition of Cu x Te 1−x in range 0.5 < x < 0.7 has shown improved control over CF formation [32].…”

“…The impact of Cu and Te composition on the RS has been investigated and an optimal composition of Cu x Te 1−x in range 0.5 < x < 0.7 has shown improved control over CF formation [32]. Furthermore the CuTe layer has been also stabilized by the insertion of carbon which mitigate the impact of phase transformation shown by pure CuTe during thermal stress [31]. Binary alloying of Ag and Te has been also studied, showing improved switching properties for the use of Ag 2 Te [33].…”