Influence of backside metallization on a coplanar X-band LNA

Follmann, Rüdiger; Langgartner, Gerald; Borkes, J.; Wolff, I.; Feldle, H.-P.

doi:10.1109/euma.2002.339226

Cited by 1 publication

(1 citation statement)

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“…T HE bulk substrate of integrated circuits (ICs) can support the propagation of parasitic modes that may result in degraded performance and/or instability of the circuit [1]- [3]. This is especially troublesome in circuits with large metallization layers on both the front side and the back side, as in circuits that use conductor-backed coplanar waveguides (CPW) or stripline interconnects [1], [4].…”

Section: Introductionmentioning

confidence: 99%

Suppression of Parasitic Substrate Modes in Multilayer Integrated Circuits

Eriksson

Gunnarsson

Nilsson

et al. 2015

IEEE Trans. Electromagn. Compat.

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Integrated circuits (ICs) with multilayer backend process and a large front-side ground plane support the propagation of parasitic substrate modes. These modes resonate at frequencies that typically are within the bandwidth of circuits operating close to and in the submillimeter-wave range, i.e., beyond 300 GHz. The resonances cause unwanted coupling and feedback, which result in circuit instability and degraded performance for circuits operating in the range of these resonances. A common method to suppress these modes from propagating is to use numerous through-wafer vias distributed over the entire circuit. In this letter, we present a study of substrate modes in multilayer ICs with thin-film microstrip interconnects at 125-330 GHz. We show that a doped Si carrier underneath the circuit effectively eliminates the effect of substrate modes on the circuit functionality. This method requires no backside processed through-wafer vias and no backside metallization.Index Terms-Electromagnetic interference, integrated circuit (IC), millimeter wave, parasitic modes, thin-film microstrip lines.

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