We report the e ect of fast thermal quenching (FQ) and light soaking (LS) on electronic transport in lithium-doped hydrogenated amorphous silicon (aSi : H(Li)), and compare the two instabilities in the same specimen. We ® nd that the metastable changes are qualitatively similar to those in phosphorusdoped hydrogenated amorphous silicon. The ® lms are in thermal equilibrium above the temperature T E , which is lower for heavier doping. However, for a given sample, the T E values are about the same for FQ and LS. Isothermal relaxation of conductivity ¼ of the metastable states follows a stretched exponential, but the relaxation parameters for FQ and LS are di erent. We also ® nd that the function Qˆln ¼ ¡ eS =k shows a large change after LS but hardly changes after FQ. The results are explained by assuming that the recombination of carriers at the local minima of the potential¯uctuations present on a-Si : H(Li) gives rise to structural changes. The observed increase in the slope of Q versus 1=T after LS is interpreted as an increase in potential uctuations. The very small change in Q observed after FQ is explained in terms of the higher mobility of hydrogen at the high temperature from which a-Si : H is quenched.