1996
DOI: 10.1016/0022-3093(95)00742-3
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Influence of annealing above the deposition temperature on metastability in amorphous silicon

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Cited by 8 publications
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“…We have previously reported that the LS increases the potential uctuations in these ® lms, whereas FQ has hardly any e ect on them. Several recent reports suggest that these metastabilities are related to the microstructure present in a-Si : H ® lms (Xu et al 1993, Irrera 1994, Vanecek et al 1996, Zellama et al 1996, Zhang et al 1996, Tsu et al 1997. The microstructure depends sensitively upon the deposition conditions (Xu et al 1996, Tsu et al 1997Bauer et al 1998).…”
mentioning
confidence: 98%
“…We have previously reported that the LS increases the potential uctuations in these ® lms, whereas FQ has hardly any e ect on them. Several recent reports suggest that these metastabilities are related to the microstructure present in a-Si : H ® lms (Xu et al 1993, Irrera 1994, Vanecek et al 1996, Zellama et al 1996, Zhang et al 1996, Tsu et al 1997. The microstructure depends sensitively upon the deposition conditions (Xu et al 1996, Tsu et al 1997Bauer et al 1998).…”
mentioning
confidence: 98%