volume 138, issue 2, P180-183 2007
DOI: 10.1016/j.mseb.2007.01.005
View full text
|
Sign up to set email alerts
|
Share

Abstract: Investigations were conducted to explore the effect of Al0.3Ga0.7N/GaN short-period superlattice (SPSL)-inserted structures in the GaN under layer on the performance of In0.2Ga0.8N/GaN multiple quantum well (MQW) light emitting diodes (LEDs). The Al0.3Ga0.7N/GaN SPSL-inserted LEDs were found to exhibit improved materials and device characteristics including decrements in ideality factor and reverse leakage current. The results of etch pit counts reveal that SPSL-induced threading dislocation density reduction …

Expand abstract

Search citation statements

Order By: Relevance

Citation Types

1
4
0

Paper Sections

0
0
0
0
0

Publication Types

0
0
0
0

Relationship

0
0

Authors

Journals