Induced quantum-Fano effect by Raman scattering and its correlation with field emission properties of silicon nanowires

The dopant (n- and p-type)-, band gap-, size- and stress-dependent field electron emission of silicon nanowires

“…The simplest and well-known Fowler–Nordheim (F–N) equation is utilized to explore the EFE mechanism and various parameters such as the field enhancement factor, work function, effective area, etc. The EFE current density ( J ) is defined in terms of the applied field ( E ) through the F–N equation, expressed as, 45,61 where β is the field enhancement factor, W = 4.15 eV is the work function of the emitter, and A FN and B FN are constants, with A FN = 1.5414 × 10 −6 A eV V −2 and B FN = 6.83 × 10 3 eV −3/2 V μm −1 . The insets in Fig.…”

“…44 We use a In the survey wide scan peaks were found, which confirms the absence of any foreign element in our samples. The survey spectra of the difference between core level spectra (HR spectra) of Si 2p, as Si 2p 3/2 and 2p 1/2 , corresponding to 99.47 eV and 100.13 eV for the n 30 sample, and on the other hand, 99.51 eV and 100.16 eV, for the p 30 sample, assigned to Si-Si 45 clearly show the presence of the Si (0) oxidation state in the grown NWs for both samples, respectively, which also supports the previous reported results of Si NWs. 11,46 Moreover, the peak shifting in BE (eV) between Si 2p 3/2 and 2p 1/2 was D = 0.6 eV.…”

“…The simplest and well-known Fowler-Nordheim (F-N) equation is utilized to explore the EFE mechanism and various parameters such as the field enhancement factor, work function, effective area, etc. The EFE current density (J) is defined in terms of the applied field (E) through the F-N equation, expressed as, 45,61 2 for n 30 , n 50 , p 30 and p 50 , respectively. The theoretical value of the field enhancement factor (b) of the grown Si NWs is calculated using the simplified model reported by Flip et al 69 for a cylindrical emitter with a height (h) and an emitter radius (r).…”

NiCo2S4 cocatalyst supported Si nanowire heterostructure for improved solar-driven water reduction: experimental and theoretical insights

“…When exposed to air, the SiO x bond forms on a native silicon oxide on the Si surface. 39,40 The core-level spectrum of Ni 2p shows two spin-orbital doublets of Ni 2p 3/2 (856.2 eV) and Ni 2p 1/2 (873.8). Further, the deconvolution of the Ni 2p peaks reveals the coexistence of Ni 3+ and Ni 2+ as well as shakeup satellite peaks attributed to oxidized Ni species due to surface oxidation.…”

“…Furthermore, the onset potential of the heterostructure positively increases from 5 mV to 301 mV ( vs. RHE), indicating enhanced transfer of photogenerated carriers at semiconductor/electrolyte interface when compared to a pristine photocathode. 39,42,43 Thus, the improved PEC performance of heterostructure photocathodes can be linked to the charge separation/transfer kinetics and enhanced catalytic activity at Si NW/NiCo 2 S 4 NS/electrolyte interface.…”