We report a study of the interaction between In-alkyls and Ga-alkyls during the low-pressure metalorganic vapor-phase epitaxy ͑LP-MOVPE͒ of In-rich In x Ga 1−x As layers around 500°C. The structural properties of the layers are determined by analyzing their transmission electron microscopy contrast. The evolution of growth rate and composition of the In x Ga 1−x As layers grown under various Ga precursor flow rates is interpreted by modeling the growth kinetics. This approach allows us to identify the main al…
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