Index contrast scaling for optical amplifiers

Saini, Sajan; Michel, Jürgen; Kimerling, Lionel C.

doi:10.1109/jlt.2003.817707

Cited by 10 publications

(6 citation statements)

References 18 publications

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“…Therefore, the potential for miniature devices in combination with our recent results suggests a promising future for this material [224]. EDWA layout optimization has been investigated taking into account the waveguide geometry and bend losses, with the result being a spiral or folded approach to reducing the device footprint [225][226][227][228][229]. Fig.…”

Section: Device Scalingmentioning

confidence: 99%

Erbium‐doped integrated waveguide amplifiers and lasers

Bradley

Pollnau

2010

Laser & Photonics Reviews

314

161

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Erbium-doped fiber devices have been extraordinarily successful due to their broad optical gain around 1.5-1.6 μm. Er-doped fiber amplifiers enable efficient, stable amplification of high-speed, wavelength-division-multiplexed signals, thus continue to dominate as part of the backbone of longhaul telecommunications networks. At the same time, Er-doped fiber lasers see many applications in telecommunications as well as in biomedical and sensing environments. Over the last 20 years significant efforts have been made to bring these advantages to the chip level. Device integration decreases the overall size and cost and potentially allows for the combination of many functions on a single tiny chip. Besides technological issues connected to the shorter device lengths and correspondingly higher Er concentrations required for high gain, the choice of appropriate host material as well as many design issues come into play in such devices. In this contribution the important developments in the field of Er-doped integrated waveguide amplifiers and lasers are reviewed and current and future potential applications are explored. The vision of integrating such Er-doped gain devices with other, passive materials platforms, such as silicon photonics, is discussed.

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Section: Device Scalingmentioning

confidence: 99%

Erbium‐doped integrated waveguide amplifiers and lasers

Bradley

Pollnau

2010

Laser & Photonics Reviews

314

161

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“…Previously published work [5] summarizes our theoretical investigations into the dependence of gain efficiency on ∆n. This work concludes a cumulative performance benefit of ∆n 2.6 for amplifier performance, quantified as the Figure where Footprint is the amount of two-dimensional planar area occupied by a coiled channel waveguide planar structure.…”

Section: Introductionmentioning

confidence: 99%

A High Index Contrast Silicon Oxynitride Materials Platform for Er-doped Microphotonic Amplifiers

et al. 2004

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Er-based optical amplification continues to be the ideal low noise, WDM crosstalk free, broadband candidate for waveguide amplifiers. Design analysis of the applicability of Er-Doped Waveguide Amplifiers (EDWAs) for micron-scale integrated photonics in a planar lightwave circuit concludes: (i) an >80× increase in gain efficiency, and (ii) a >40× increase in device shrink can be realized, for a high index contrast EDWA (with a corecladding index difference of ∆n=0.1↔0.7), compared to a conventional Er-doped fiber amplifier. The materials challenge now is to establish a robust materials system which meets this high index difference design requirement while simultaneously leveraging the capability of silicon (Si) processing: a host platform for EDWAs must be found which can integrate with Si Microphotonics. Silicon nitride (Si 3 N 4 ), silicon oxide (SiO 2 ) and a miscible silicon oxynitride alloy (SiON) of the two meet this materials challenge. We present the results of reactive and conventional magnetron sputtering based materials characterization for this high index host system. Room temperature and 4 K photoluminescence studies for annealed samples show the reduction of non-radiative deexcitation centers while maintaining an amorphous host structure. Atomic force microscopy shows less than 1 nm peak-to-peak roughness in deposited films. Prism coupler measurements show a reliable reproducibility of host index of refraction with waveguide scattering loss <2 dB/cm. We conclude that the SiON host system forms an optimal waveguide core for an SiO 2 -clad EDWA. Initial gain measurements show a gain coefficient of approximately 3.9 dB/cm.

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“…13 This scheme employs the hybrid PC waveguide design, [14][15][16][17] simultaneously confining and guiding light by total internal reflection ͑TIR͒ and the photonic band gap effect.…”

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confidence: 99%

“…1͑d͒, using the Er parameters cited in Ref. 13, with an Er concentration of 2 ϫ 10 20 cm −3 . Figure 1͑d͒ ͑right axis͒ plots the pump power enhancement in the defect layer as "Confinement ϫ " =Tn circ…”

mentioning

confidence: 99%

“…Previously, 13 we analyzed the influence of index contrast on the gain efficiency of optically pumped WOAs: the need to co-or counter-propagate a pump wavelength results in a subexponential decay of pump power along the WOA and a nonuniform gain profile, 20 making length a critical device parameter for optimizing gain. The hybrid structure presented here allows one to circumvent this constraint and achieve the more uniform gain profile characteristic of electrically injected semiconductor optical amplifiers.…”

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confidence: 99%

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Hybrid waveguides for optically pumped amplifiers

Saini

Hong

Bernardis

et al. 2009

Applied Physics Letters

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A hybrid waveguide based on simultaneous propagation of photonic crystal (PC) and total internal reflection confined optical modes is introduced for a scheme to uniformly pump waveguide optical amplifiers (WOAs). Planar one-dimensional PC structures were deposited by plasma enhanced chemical vapor deposition and characterized by reflectivity as a function of angle, confirming the existence of PC defect states. Two design trade-offs, angular acceptance and critical coupling, are modeled to demonstrate optimization of optically pumped gain within the PC defect state. The advantage of uniform pumping on the WOA gain profile is briefly discussed.

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Index contrast scaling for optical amplifiers

Cited by 10 publications

References 18 publications

Erbium‐doped integrated waveguide amplifiers and lasers

Erbium‐doped integrated waveguide amplifiers and lasers

A High Index Contrast Silicon Oxynitride Materials Platform for Er-doped Microphotonic Amplifiers

Hybrid waveguides for optically pumped amplifiers

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