MRS Proc. 2000 DOI: 10.1557/proc-610-b2.4 View full text
R.J. Kline, J.F. Richards, P.E. Russell

Abstract: AbstractThis paper discusses problems inherent to scanning spreading resistance microscopy (SSRM) and ways to correct them to increase the resolution of two-dimensional dopant profiling. Specifically this paper looks into issues related to the probe-silicon contact and the damaged surface layer created by the sample preparation technique. Degradation of the measured dopant profile was observed when the probe scanned over the nitride spacers. Attempts to reduce the required contact pressures to increase the lif…

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