Superlattices and Microstructures volume 44, issue 4-5, P411-415 2008 DOI: 10.1016/j.spmi.2007.10.010 View full text
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M. Schramboeck, A.M. Andrews, P. Klang, W. Schrenk, G. Hesser, F. Schäffler, G. Strasser

Abstract: InAs quantum dots were grown on Al x Ga 1−x As surfaces with varying Al concentrations. Atomic force microscopy measurements conducted on surface quantum dots showed that surfaces with higher Al concentrations produce smaller dots compared to GaAs surfaces. Photoluminescence measurements performed on buried quantum dots showed a blue shift and spectral broadening of the luminescence signal for increasing Al concentrations. For Al concentrations of 45% quantum dots with ground state energies above the GaAs ban…

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