2018
DOI: 10.1126/sciadv.aau9711
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In situ recombination junction between p-Si and TiO 2 enables high-efficiency monolithic perovskite/Si tandem cells

Abstract: A minimalist approach to integration yields tandem solar cells with high efficiency.

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Cited by 139 publications
(166 citation statements)
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References 43 publications
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“…We implement experimentally derived electrical input parameters and the generation profile derived from the above optical simulation into the Quokka cell simulator to assess the performance of the Si cell under sunlight filtered by the top‐cell (Figure S3, Supporting Information). Since it is challenging to separately characterize the subcells in a 2‐T tandem configuration due to the difficultly in device isolation, parameters including saturation current density ( J 0 ) at both surfaces, the bulk lifetime, and the front contact resistance were measured on co‐processed or similarly processed test structures rather than complete tandem cells . The current density extracted from the modeled J–V curves (Figure S3, Supporting Information) agrees well with those measured for our tandem devices.…”
Section: Electrical Modeling For Optimizing Si Subcell Designsupporting
confidence: 67%
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“…We implement experimentally derived electrical input parameters and the generation profile derived from the above optical simulation into the Quokka cell simulator to assess the performance of the Si cell under sunlight filtered by the top‐cell (Figure S3, Supporting Information). Since it is challenging to separately characterize the subcells in a 2‐T tandem configuration due to the difficultly in device isolation, parameters including saturation current density ( J 0 ) at both surfaces, the bulk lifetime, and the front contact resistance were measured on co‐processed or similarly processed test structures rather than complete tandem cells . The current density extracted from the modeled J–V curves (Figure S3, Supporting Information) agrees well with those measured for our tandem devices.…”
Section: Electrical Modeling For Optimizing Si Subcell Designsupporting
confidence: 67%
“…The significant combined optical loss of 7.8 mA cm −2 highlights the utmost importance of designing advanced architectures for better light management to unleash the full potential of the monolithic tandems. We note that the simulations predict an absorbed photocurrent in the active layers that exceeds the values measured in our device . This discrepancy can be attributed foremost to the absence of shading losses to a front metal grid, which were ≈3% of the active area of the device.…”
Section: Optical Modeling and Optimizationcontrasting
confidence: 62%
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“…4,5,7,19,20 Recently, the p-i-n architecture for perovskite top-cells prevailed over the n-i-p architecture, especially due to temperature limitations of the SHJ cell (200 C), which prevents the use of high temperature process, such as sintering of mesoporous TiO 2 . [21][22][23] Although there are possibilities to deposit the n-type contact at lower temperatures, 24 and use temperature stable bottom cells, 25,26 strong absorption of the p-type top contacts was reported for n-i-p architectures. 14,27 An efficient device design was presented by Bush et al, who mitigated these losses by utilizing a p-i-n top cell architecture with reduced parasitic absorption in the n-type top contact.…”
Section: Introductionmentioning
confidence: 99%