In situ observation of droplet nanofluidics for yielding low-dimensional nanomaterials

Zheng, Fan; Maurice, Jean‐Luc; Florea, Ileana; Chen, Wanghua; Yu, Linwei; Guilet, S.; Cambril, E.; Lafosse, Xavier; Couraud, Laurent; Bouchoule, S.; Cabarrocas, Pere Roca i

doi:10.1016/j.apsusc.2021.151510

Cited by 4 publications

(3 citation statements)

References 63 publications

(66 reference statements)

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“…IPSLS can be regarded as a nano liquid phase epitaxy [95] process or nano metal induced crystallization. [96,97] Figure 5 shows the flow chart of IPSLS NW growth. First, SnO 2 nanoparticles are dispersed on the crystalline Si substrate and exposed to a H 2 plasma at 120 C to partly reduced them into metallic Sn, as shown in Figure 5a.…”

Section: Fabrication Methodsmentioning

confidence: 99%

Rational Control of GeSn Nanowires

Gong

Zheng

Cabarrocas

et al. 2022

Physica Rapid Research Ltrs

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Research on Si compatible direct bandgap semiconductors is a hot topic due to the high demand of Si compatible optoelectronics. The group IV compounds, namely GeSn, has been studied extensively in its different forms: thin films, nanowires (NWs), and nanocrystals. Importantly, the attention being paid to GeSn NWs has increased in recent years thanks to two key factors: 1) better crystalline quality due to an easier strain relaxation in NWs; and 2) extraordinary Sn content (up to 30 at.%) associated to a very fast NW growth (>20 nm s−1). Therefore, to effectively control the growth of GeSn NWs is a key issue for a practical application. Herein, various control aspects including the nature of the catalysts, the morphology of the NWs, and their Sn content are presented.

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Section: Fabrication Methodsmentioning

confidence: 99%

Rational Control of GeSn Nanowires

Gong

Zheng

Cabarrocas

et al. 2022

Physica Rapid Research Ltrs

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“…Despite being known since 1964, the VLS mechanism for nonplanar NWs was explained in detail 30 years later, stemming from real-time in situ electron microscopy growth observation. Phenomena such as layer-by-layer growth, heterogeneous nucleation, diffusion of a metal catalyst into the NW, atomic step flow on a nanofacet, and the transport mechanism of the catalytic droplet were revealed, which significantly improved the current understanding of the growth mechanisms of these nanostructures . Most in situ studies were based on growth experiments of relatively well-known and straightforward materials, such as Si, , Ge, or GaAs using Au as a catalyst, or others. − Unlike the well-studied semiconductor NWs whose precursors are supplied in the gas phase and can be fed into a TEM chamber relatively easily, the precursors of other semiconductor materials, such as II–VI materials, chalcogenides, oxides, and part of the III–V materials, are in the solid phase.…”

Section: Introductionmentioning

confidence: 99%

“…Despite being known since 1964, 7 the VLS mechanism for nonplanar NWs was explained in detail 30 years later, stemming from real-time in situ electron microscopy growth observation. Phenomena such as layer-by-layer growth, 35 heterogeneous nucleation, 36 diffusion of a metal catalyst into the NW, 37 atomic step flow on a nanofacet, 38 and the transport mechanism of the catalytic droplet 39 were revealed, which significantly improved the current understanding of the growth mechanisms of these nanostructures. 40 Most in situ studies were based on growth experiments of relatively well-known and straightforward materials, such as Si, 36 , 39 Ge, or GaAs 40 using Au as a catalyst, or others.…”

Section: Introductionmentioning

confidence: 99%

Real-Time Study of Surface-Guided Nanowire Growth by In Situ Scanning Electron Microscopy

et al. 2022

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Surface-guided growth has proven to be an efficient approach for the production of nanowire arrays with controlled orientations and their largescale integration into electronic and optoelectronic devices. Much has been learned about the different mechanisms of guided nanowire growth by epitaxy, graphoepitaxy, and artificial epitaxy. A model describing the kinetics of surfaceguided nanowire growth has been recently reported. Yet, many aspects of the surface-guided growth process remain unclear due to a lack of its observation in real time. Here we observe how surface-guided nanowires grow in real time by in situ scanning electron microscopy (SEM). Movies of ZnSe surface-guided nanowires growing on periodically faceted substrates of annealed M-plane sapphire clearly show how the nanowires elongate along the substrate nanogrooves while pushing the catalytic Au nanodroplet forward at the tip of the nanowire. The movies reveal the timing between competing processes, such as planar vs nonplanar growth, catalyst-selective vapor−liquid−solid elongation vs nonselective vapor−solid thickening, and the effect of topographic discontinuities of the substrate on the growth direction, leading to the formation of kinks and loops. Contrary to some observations for nonplanar nanowire growth, planar nanowires are shown to elongate at a constant rate and not by jumps. A decrease in precursor concentration as it is consumed after long reaction time causes the nanowires to shrink back instead of growing, thus indicating that the process is reversible and takes place near equilibrium. This real-time study of surface-guided growth, enabled by in situ SEM, enables a better understanding of the formation of nanostructures on surfaces.

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