In-situ As-P exchange monitoring in metal-organic vapor phase epitaxy of InGaAs/InP heterostructure by spectroscopic and kinetic ellipsometry

High-resolution depth profile of the InGaP-on-GaAs heterointerface by FE-AES and its relationship to device properties

“…5. Sudo et al [14] reported that the diffusion of P atoms by P-source supply causes the increase of the full-width of half-maximum (FWHM) of PL from a QW, but our results is not consistent with that report.…”

“…Metalorganic vapor phase epitaxy (MOVPE) is one of the most important methods for the growth of the epitaxial wafers used for fabricating those devices, but it is known that unexpected transition layers are formed at As/P heterointerfaces during MOVPE growth [5][6][7][8][9][10][11][12][13][14][15][16][17][18]. These layers can form an undesired barrier or well in band gap profiles, or can cause a gradual heterointerface, that would result in undesired device properties such as low electron mobility in HEMTs or low current gain in HBTs.…”

“…Low-temperature photoluminescence (PL) has been widely used for determining the transition layers [5][6][7][8][9][10][11][12][13][14]. X-ray diffraction (XRD) [15,16] or X-ray crystal truncation rod (CTR) measurement [17] has been also used for evaluating the interface condition of quantum-well (QW) structure.…”

“…X-ray diffraction (XRD) [15,16] or X-ray crystal truncation rod (CTR) measurement [17] has been also used for evaluating the interface condition of quantum-well (QW) structure. Kinetic ellipsometry measurement studies on the relation between the formation of a transition layer at the As/P heterointerface and the gas-switching sequence of MOVPE has also been reported [12][13][14].…”

The role of the surface adsorption layer during MOVPE growth analyzed by the flow modulation method

“…The requirement for the control of the thickness and the composition of such MQW layers is strict: the thickness control by less than a nanometer and the composition control by less than a percent. Also, the abruptness of the composition at the interface of different layers and the uniformity in a single layer is mandatory [1][2][3]. In the development process of such devices, many aspects of MOVPE crystal growth are still not yet understood.…”