In Situ and Non‐Volatile Bandgap Tuning of Multilayer Graphene Oxide in an All‐Solid‐State Electric Double‐Layer Transistor

Tsuchiya, Takashi; Terabe, Kazuya; Aono, Masakazu

doi:10.1002/adma.201304770

Cited by 83 publications

(113 citation statements)

References 28 publications

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“…On the other hand, as early as 1996, YSZ has already been successfully used as the buffer layer in FET, showing good insulating behavior [147]. In 2014, Tsuchiya [62]. They found sp 2 /sp 3 fraction variations in the GO and high EDL capacity because of the nanoionic motion of protons at the GO/YSZ interface.…”

Section: Yttria-stabilized Zirconiamentioning

confidence: 97%

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Electric double-layer transistors: a review of recent progress

2015

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With the miniaturization of electronic devices, it is essential to achieve higher carrier density and lower operation voltage in field-effect transistors (FETs). However, this is a great challenge in conventional FETs owing to the low capacitance and electric breakdown of gate dielectrics. Recently, electric double-layer technology with ultra-high charge-carrier accumulation at the semiconductor channel/electrolyte interface has been creatively introduced into transistors to overcome this problem. Some interesting electrical transport characteristics such as superconductivity, metal-insulator transition, and tunable thermoelectric behavior have been modulated both theoretically and experimentally in electric double-layer transistors (EDLTs) with various semiconductor channel layers and electrolyte materials. The present article is a review of the recent progress in the EDLTs and the impacts of EDLT technology on modulating the charge transportation of various electronics.

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Section: Yttria-stabilized Zirconiamentioning

confidence: 97%

“…Recently, a new study of yttria-stabilized zirconia (YSZ)-gated graphene oxide (GO) transistor based on proton conduction was reported by Tsuchiya et al [62]. The on/off ratio increased, while l FE decreased with the variation of I off , and both of them in the device can be tuned by the band-gap tuning (BGT).…”

Section: Carbon Nanotubes and Graphenementioning

confidence: 97%

Electric double-layer transistors: a review of recent progress

2015

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“…Both of these behaviors agree well with that of a GO-EDLT previously fabricated using proton-conducting nanograined YSZ. 19,38 On the basis of the result, the redox reaction of GO can be safely achieved by proton migration in mesoporous SiO 2 thin film. Note that the fairly large i D around 0 V is attributed to the transient EDL charging current between source and drain electrodes, and that the scale out of i D in the V G range of 0.7 to 2.6 V was due to overlapping between very large i G and extremely small i D (several tens of pA).…”

Section: Resultsmentioning

confidence: 97%

In Situ and Nonvolatile Photoluminescence Tuning and Nanodomain Writing Demonstrated by All-Solid-State Devices Based on Graphene Oxide

et al. 2015

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In situ and nonvolatile tuning of photoluminescence (PL) has been achieved based on graphene oxide (GO), the PL of which is receiving much attention because of various potential applications of the oxide (e.g., display, lighting, and nano-biosensor). The technique is based on in situ and nonvolatile tuning of the sp(2) domain fraction to the sp(3) domain fraction (sp(2)/sp(3) fraction) in GO through an electrochemical redox reaction achieved by solid electrolyte thin films. The all-solid-state variable PL device was fabricated by GO and proton-conducting mesoporous SiO2 thin films, which showed an extremely low PL background. The device successfully tuned the PL peak wavelength in a very wide range from 393 to 712 nm, covering that for chemically tuned GO, by adjusting the applied DC voltage within several hundred seconds. We also demonstrate the sp(2)/sp(3) fraction tuning using a conductive atomic force microscope. The device achieved not only writing, but also erasing of the sp(2)/sp(3)-fraction-tuned nanodomain (both directions operation). The combination of these techniques is applicable to a wide range of nano-optoelectronic devices including nonvolatile PL memory devices and on-demand rewritable biosensors that can be integrated into nano- and microtips which are transparent, ultrathin, flexible, and inexpensive.

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“…[13][14][15] We recently reported a technique for in situ sp 2 /sp 3 tuning of GO in an all-solid-state electric double layer transistor (EDLT). 16 Reversible and nonvolatile tuning was achieved by using a solid electrochemical reaction due to proton migration in the solid electrolyte thin film. Modulation of the band gap, the field effect mobility of the electronic carrier, and the ON/OFF ratio in the electrostatic switching were demonstrated by electric transport and UV-Vis-near-infrared (NIR) reflectance measurement.…”

mentioning

confidence: 99%

“…Details of the fabrication procedure are described elsewhere. 16 The optical microscope (Nikon Eclipse ME600) had a 100-W halogen lamp. Electrochemical measurements were performed using a parameter analyzer (Keithley 4200-SCS).…”

mentioning

confidence: 99%