In situ AFM and Raman spectroscopy study of the crystallization behavior of Ge2Sb2Te5 films at different temperature

Wu, Yunhua; Liu, Kun; Li, Dawei; Guo, Yukun; Pan, Shi

doi:10.1016/j.apsusc.2011.10.021

Cited by 17 publications

(8 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…4(b), we can see that the grains are uniformly distributed through the sample. The distribution of the crystal grain is consistent with the schematic diagram drawn by Wu et al [23]. Fig.…”

Section: Resultssupporting

confidence: 81%

Effect of the Sn dopant on the crystallization of amorphous Ge2Sb2Te5 films induced by an excimer laser

Bai

Liu

Han

et al. 2015

Optics & Laser Technology

View full text Add to dashboard Cite

“…4(b), we can see that the grains are uniformly distributed through the sample. The distribution of the crystal grain is consistent with the schematic diagram drawn by Wu et al [23]. Fig.…”

Section: Resultssupporting

confidence: 81%

Effect of the Sn dopant on the crystallization of amorphous Ge2Sb2Te5 films induced by an excimer laser

Bai

Liu

Han

et al. 2015

Optics & Laser Technology

View full text Add to dashboard Cite

“…Intensities of the first two bands are observed to decrease by increasing the concentration of Se, while it is vice versa for the band observed at 169 cm −1 . The band at 123 cm −1 might be assigned to the A 1 mode corresponding to symmetric stretching of a triangle of three Te atoms [25,26], while that at 143 cm −1 might be ascribed to the amorphous Te-Te stretching mode [27,28]. The later one has also been assigned to t-Se crystals [29].…”

Section: Resultsmentioning

confidence: 99%

Direct bandgap materials based on the thin films of Se x Te100 − x nanoparticles

2012

View full text Add to dashboard Cite

In this study, we fabricated thin films of SexTe100 − x (x = 0, 3, 6, 9, 12, and 24) nanoparticles using thermal evaporation technique. The results obtained by X-ray diffraction show that the as-synthesized nanoparticles have polycrystalline structure, but their crystallinity decreases by increasing the concentration of Se. They were found to have direct bandgap (Eg), whose value increases by increasing the Se content. These results are completely different than those obtained in the films of SexTe100 − x microstructure counterparts. Photoluminescence and Raman spectra for these films were also demonstrated. The remarkable results obtained in these nanoparticles specially their controlled direct bandgap might be useful for the development of optical disks and other semiconductor devices.

show abstract

“…This band might be assigned to the A 1 mode corresponding to symmetric stretching of a triangle of 3 Te atoms, 24,25 while that at 140 cm −1 might be ascribed to the amorphous Te-Te stretching mode. 26,27 From the application point of view, the results obtained in the present tellurium rich nanomaterials (Te 97 Ga 3 ) are remarkable. The result shows the direct bandgap, which might be useful for different applications.…”

Section: Resultsmentioning

confidence: 82%

Direct Bandgap Material Based on Thin Film of Te₉₇Ga₃Nanoparticles

Salah¹,

Habib²,

Khan³

2012

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

Thin film of Te 97 Ga 3 nanoparticles has been synthesized using the E-beam evaporation method. The sample was characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), Photoluminescence (PL) and Raman spectroscopy. XRD result of the deposited film suggests a polycrystalline structure, whereas, the SEM images display uniform morphology with nanoparticles of size around 15 nm. A direct bandgap (E g ) has been observed in the as-synthesized thin film, which is different to that of the microstructure counterpart. Photoluminescence and Raman spectra for this thin film were also studied. The obtained results on this Te 97 Ga 3 nanomaterial especially its direct bandgap might be useful for development of optical disks and other semiconducting devices.In recent years, thin films of semiconducting nanomaterials have attracted much attention. 1,2 Amongst them, nano-chalcogenides are the important class of materials for various applications such as nanoelectronic devices, nano-memory devices, optical memory devices etc. Recently, we have synthesized films of different nano-chlcogenides and studied their structural, optical and electrical properties. 3-8 However, these studies are still at the early stage and need to be further extended to cover-up the variety of chalcogenides. It is also important to note that the primary results obtained on these nanostructures are remarkable. Several studies are focused on the fabrication and properties of different nanostructures of different amorphous alloys/crystalline materials. [9][10][11][12][13][14][15][16] Our group has also realized the scope of nanostructure materials in thin film forms, and therefore, published several papers 3-8 on the synthesis and characterization of thin films of nano-chalcogenides in both amorphous and crystalline form prepared by different techniques. However, these studies showed that these films have indirect bandgap, which makes these materials unsuitable for the application in semiconductor devices. 17 The present work reports on the synthesis of direct bandgap material at nanoscale. Thin film of Te 97 Ga 3 nanoparticles has been deposited using E-beam evaporation method. The as-synthesized thin film has been characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), Photoluminescence (PL) and Raman spectroscopy. ExperimentalThe microstructure form of Te 97 Ga 3 semiconducting alloy was prepared from its components of 99.999% high purity by the melt quenching technique. Appropriate proportions of the raw materials were weighed and sealed into quartz ampoule under vacuum of about 10 −5 Torr. The sealed ampoule was then placed in a muffle furnace, where the temperature was increased at the rate of 3 K/min up-to 950 K and kept at that temperature for 14 hours. Through the heating process, ampoule was regularly shaken to ensure homogeneity of the composition within the sample. The melt was then rapidly quenched in ice water. The prepared mat...

show abstract

In situ AFM and Raman spectroscopy study of the crystallization behavior of Ge2Sb2Te5 films at different temperature

Cited by 17 publications

References 19 publications

Effect of the Sn dopant on the crystallization of amorphous Ge2Sb2Te5 films induced by an excimer laser

Effect of the Sn dopant on the crystallization of amorphous Ge2Sb2Te5 films induced by an excimer laser

Direct bandgap materials based on the thin films of Se x Te100 − x nanoparticles

Direct Bandgap Material Based on Thin Film of Te₉₇Ga₃Nanoparticles

Contact Info

Product

Resources

About

In situ AFM and Raman spectroscopy study of the crystallization behavior of Ge2Sb2Te5 films at different temperature

Cited by 17 publications

References 19 publications

Effect of the Sn dopant on the crystallization of amorphous Ge2Sb2Te5 films induced by an excimer laser

Effect of the Sn dopant on the crystallization of amorphous Ge2Sb2Te5 films induced by an excimer laser

Direct bandgap materials based on the thin films of Se x Te100 − x nanoparticles

Direct Bandgap Material Based on Thin Film of Te97Ga3Nanoparticles

Contact Info

Product

Resources

About

Direct Bandgap Material Based on Thin Film of Te₉₇Ga₃Nanoparticles