In-doped Sb nanowires grown by MOCVD for high speed phase change memories

Cecchini, Raimondo; Selmo, S.; Wiemer, C.; Fanciulli, M.; Rotunno, Enzo; Lazzarini, L.; Rigato, Matteo; Pogány, D.; Lugstein, Alois; Longo, M.

doi:10.1016/j.mne.2018.11.002

Cited by 6 publications

(5 citation statements)

References 23 publications

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“…High‐aspect‐ratio nanostructures of Sb 2 Te 3 and other chalcogenide alloys are expected to bring important advantages in all the above‐mentioned applications. Indeed, the reduction of the programming power in NW‐based, compared to thin film‐based, PCM cells has been predicted and widely demonstrated . A higher figure of merit is expected for thermoelectric generators built on chalcogenide NWs, NPs and other nanostructures .…”

Section: Introductionmentioning

confidence: 99%

High‐Density Sb₂Te₃ Nanopillars Arrays by Templated, Bottom‐Up MOCVD Growth

Cecchini

Gajjela

Martella

et al. 2019

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Sb2Te3 exhibits several technologically relevant properties, such as high thermoelectric efficiency, topological insulator character, and phase change memory behavior. Improved performances are observed and novel effects are predicted for this and other chalcogenide alloys when synthetized in the form of high‐aspect‐ratio nanostructures. The ability to grow chalcogenide nanowires and nanopillars (NPs) with high crystal quality in a controlled fashion, in terms of their size and position, can boost the realization of novel thermoelectric, spintronic, and memory devices. Here, it is shown that highly dense arrays of ultrascaled Sb2Te3 NPs can be grown by metal organic chemical vapor deposition (MOCVD) on patterned substrates. In particular, crystalline Sb2Te3 NPs with a diameter of 20 nm and a height of 200 nm are obtained in Au‐functionalized, anodized aluminum oxide (AAO) templates with a pore density of ≈5 × 1010 cm−2. Also, MOCVD growth of Sb2Te3 can be followed either by mechanical polishing and chemical etching to produce Sb2Te3 NPs arrays with planar surfaces or by chemical dissolution of the AAO templates to obtain freestanding Sb2Te3 NPs forests. The illustrated growth method can be further scaled to smaller pore sizes and employed for other MOCVD‐grown chalcogenide alloys and patterned substrates.

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Section: Introductionmentioning

confidence: 99%

High‐Density Sb₂Te₃ Nanopillars Arrays by Templated, Bottom‐Up MOCVD Growth

Cecchini

Gajjela

Martella

et al. 2019

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“…An intrinsic advantage of cell down scaling is obtained by reducing the programming volume, hence lowering the energy needed for the phase transitions, therefore the power consumption. In this regard, nanowires (NWs) offer promising perspectives due to their low dimensionality and single crystalline structure [12,[22][23][24][25][26][27][28][29][30]. However, up to now, the synthesis and the physical-chemical characterization of Ge(Sb)Te/Sb 2 Te 3 core-shell NWs have not been reported, except for our recent study on GeTe/Sb 2 Te 3 core shell NWs [31].…”

Section: Introductionmentioning

confidence: 96%

Phase Change Ge-Rich Ge–Sb–Te/Sb2Te3 Core-Shell Nanowires by Metal Organic Chemical Vapor Deposition

et al. 2021

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Ge-rich Ge–Sb–Te compounds are attractive materials for future phase change memories due to their greater crystallization temperature as it provides a wide range of applications. Herein, we report the self-assembled Ge-rich Ge–Sb–Te/Sb2Te3 core-shell nanowires grown by metal-organic chemical vapor deposition. The core Ge-rich Ge–Sb–Te nanowires were self-assembled through the vapor–liquid–solid mechanism, catalyzed by Au nanoparticles on Si (100) and SiO2/Si substrates; conformal overgrowth of the Sb2Te3 shell was subsequently performed at room temperature to realize the core-shell heterostructures. Both Ge-rich Ge–Sb–Te core and Ge-rich Ge–Sb–Te/Sb2Te3 core-shell nanowires were extensively characterized by means of scanning electron microscopy, high resolution transmission electron microscopy, X-ray diffraction, Raman microspectroscopy, and electron energy loss spectroscopy to analyze the surface morphology, crystalline structure, vibrational properties, and elemental composition.

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“…Among the different methods explored to overcome the above limitations, nanowire (NWs) based PCMs fabricated by the bottom-up approach have drawn considerable interest [ 10 , 11 , 12 , 13 , 14 , 15 ]. Advantages of using NWs for such an application are their small sub lithographic feature sizes and single-crystalline defect-free structure, where novel functionalities are expected to originate by engineering the constituent compositions, sizes, and structures, as in the case of axial [ 16 , 17 , 18 ], radial (core-shell) [ 19 , 20 ], and branched heterostructured NWs [ 21 ].…”

Section: Introductionmentioning

confidence: 99%

Interface Analysis of MOCVD Grown GeTe/Sb2Te3 and Ge-Rich Ge-Sb-Te/Sb2Te3 Core-Shell Nanowires

et al. 2022

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Controlling material thickness and element interdiffusion at the interface is crucial for many applications of core-shell nanowires. Herein, we report the thickness-controlled and conformal growth of a Sb2Te3 shell over GeTe and Ge-rich Ge-Sb-Te core nanowires synthesized via metal-organic chemical vapor deposition (MOCVD), catalyzed by the Vapor–Liquid–Solid (VLS) mechanism. The thickness of the Sb2Te3 shell could be adjusted by controlling the growth time without altering the nanowire morphology. Scanning electron microscopy (SEM) and X-ray diffraction (XRD) techniques were employed to examine the surface morphology and the structure of the nanowires. The study aims to investigate the interdiffusion, intactness, as well as the oxidation state of the core-shell nanowires. Angle-resolved X-ray photoelectron spectroscopy (XPS) was applied to investigate the surface chemistry of the nanowires. No elemental interdiffusion between the GeTe, Ge-rich Ge-Sb-Te cores, and Sb2Te3 shell of the nanowires was revealed. Chemical bonding between the core and the shell was observed.

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In-doped Sb nanowires grown by MOCVD for high speed phase change memories

Cited by 6 publications

References 23 publications

High‐Density Sb₂Te₃ Nanopillars Arrays by Templated, Bottom‐Up MOCVD Growth

High‐Density Sb₂Te₃ Nanopillars Arrays by Templated, Bottom‐Up MOCVD Growth

Phase Change Ge-Rich Ge–Sb–Te/Sb2Te3 Core-Shell Nanowires by Metal Organic Chemical Vapor Deposition

Interface Analysis of MOCVD Grown GeTe/Sb2Te3 and Ge-Rich Ge-Sb-Te/Sb2Te3 Core-Shell Nanowires

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In-doped Sb nanowires grown by MOCVD for high speed phase change memories

Cited by 6 publications

References 23 publications

High‐Density Sb2Te3 Nanopillars Arrays by Templated, Bottom‐Up MOCVD Growth

High‐Density Sb2Te3 Nanopillars Arrays by Templated, Bottom‐Up MOCVD Growth

Phase Change Ge-Rich Ge–Sb–Te/Sb2Te3 Core-Shell Nanowires by Metal Organic Chemical Vapor Deposition

Interface Analysis of MOCVD Grown GeTe/Sb2Te3 and Ge-Rich Ge-Sb-Te/Sb2Te3 Core-Shell Nanowires

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High‐Density Sb₂Te₃ Nanopillars Arrays by Templated, Bottom‐Up MOCVD Growth

High‐Density Sb₂Te₃ Nanopillars Arrays by Templated, Bottom‐Up MOCVD Growth