volume 134, issue 2-3, P222-226 2006
DOI: 10.1016/j.mseb.2006.07.029
View full text
|
Sign up to set email alerts
|
Share

Abstract: The type and density of the point defects that are generated in the Si surface layer during thermal oxidation depend on the oxidation condition: temperature, cooling rate, oxidation time, impurity content. The interaction between point defects with extended defects and impurities affect the SiO 2 structure and Si-SiO 2 interface properties. Hydrogen content in the oxidation ambient plays an important role in the density of point defects at the interface. The influence of point defects and impurities may be di…

Expand abstract