J. Eid, J.L. Santailler, B. Ferrand, A. Basset, A. Passero, R. Lewandowska, C. Balloud, J. Camassel
Cubic-silicon carbide crystals have been grown from carbon-rich silicon solutions using the travellingzone method. To improve the growth process, we investigated the effect of controlling more tightly some of the growth parameters. Using such improved growth conditions, our best sample is a 12 mm diameter and ∼3 mm long 3C-SiC crystal. It is grown on a (0001) 2 • off, 6H-SiC seed and has 111 -orientation. The low amount of silicon inclusions results in a reduced internal stress, which is demonstrated by the c…
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