Improved Resistance Switching Characteristics in Ti-Doped $\hbox{Yb}_{2}\hbox{O}_{3}$ for Resistive Nonvolatile Memory Devices

Mondal, Somnath; Her, Jim-Long; Chen, Fa-Hsyang; Shih, Shao‐Ju; Pan, Tung-Ming

doi:10.1109/led.2012.2196672

Cited by 23 publications

(16 citation statements)

References 16 publications

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“…In addition, Lu et al in [15] review the recent progress on the development of two terminal resistive devices and report on a number of promising performance metrics shown by devices based on solid state electrolytes like a-Si. Specifically, resistance switching speed of < 10 ns and endurance of > 10 8 cycles are mentioned, whereas data retention of >10 years at 85 o C and nominal energy consumption per operation in the subpicojoule range have also been reported [16][17][18][19]. Some of the recent advances of binary metal-oxide resistive switching devices reported in the literature are summarized in Table 4 of [20].…”

Section: Application Potential Of Memristor-based Circuitsmentioning

confidence: 99%

A Novel Design and Modeling Paradigm for Memristor-Based Crossbar Circuits

Vourkas

Sirakoulis

2012

IEEE Trans. Nanotechnology

118

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Section: Application Potential Of Memristor-based Circuitsmentioning

confidence: 99%

A Novel Design and Modeling Paradigm for Memristor-Based Crossbar Circuits

Vourkas

Sirakoulis

2012

IEEE Trans. Nanotechnology

118

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“…But rare-earth oxide materials have proved themselves superior by representing better resistive switching (RS) characteristics for the development of NVM devices78. One of the rare-earth metal oxides is CeO 2 , which makes use of the oxygen getting ability of Ce.…”

mentioning

confidence: 99%

Endurance and Cycle-to-cycle Uniformity Improvement in Tri-Layered CeO2/Ti/CeO2 Resistive Switching Devices by Changing Top Electrode Material

Rana

Akbar

Ismail

et al. 2017

Sci Rep

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Resistance switching characteristics of CeO2/Ti/CeO2 tri-layered films sandwiched between Pt bottom electrode and two different top electrodes (Ti and TaN) with different work functions have been investigated. RRAM memory cells composed of TaN/CeO2/Ti/CeO2/Pt reveal better resistive switching performance instead of Ti/CeO2/Ti/CeO2/Pt memory stacks. As compared to the Ti/CeO2 interface, much better ability of TaN/CeO2 interface to store and exchange plays a key role in the RS performance improvement, including lower forming/SET voltages, large memory window (~102) and no significant data degradation during endurance test of >104 switching cycles. The formation of TaON thinner interfacial layer between TaN TE and CeO2 film is found to be accountable for improved resistance switching behavior. Partial charge density of states is analyzed using density functional theory. It is found that the conductive filaments formed in CeO2 based devices is assisted by interstitial Ti dopant. Better stability and reproducibility in cycle-to-cycle (C2C) resistance distribution and Vset/Vreset uniformity were achieved due to the modulation of current conduction mechanism from Ohmic in low field region to Schottky emission in high field region.

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“…This may be due to the fact that smaller physical region reduces the randomness of the electric field strength in switching operation. 37 Moreover, the rough surface in Sm 2 O 3 thin film causes a local electric field enhancement, 16 which limits the current conduction in a localized area, thus preventing the current (resistance) distribution through the multiple filamentary paths during cyclic measurement.…”

Section: Resistive Switching Behavior Of Sm 2 O 3 and Lu 2 O 3 Rermentioning

confidence: 99%

Current conduction and resistive switching characteristics of Sm2O3 and Lu2O3 thin films for low-power flexible memory applications

Mondal

Chueh

Pan

2014

Journal of Applied Physics

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Articles you may be interested inResistive switching characteristics of Si3N4-based resistive-switching random-access memory cell with tunnel barrier for high density integration and low-power applications Evolution of RESET current and filament morphology in low-power HfO 2 unipolar resistive switching memory Appl. Phys. Lett. 98, 103511 (2011); 10.1063/1.3565239Pulse-induced low-power resistive switching in Hf O 2 metal-insulator-metal diodes for nonvolatile memory applicationsIn this article, the current conduction and resistive switching (RS) behavior in flexible Sm 2 O 3 and Lu 2 O 3 resistive random access memories (ReRAM) are investigated. Amorphous Sm 2 O 3 and Lu 2 O 3 thin films were deposited at room temperature by radio-frequency magnetron sputtering on flexible polyethylene terephthalate substrate. The structural morphologies of the Sm 2 O 3 and Lu 2 O 3 thin films strongly depend on the lattice energy of the oxides. The dominant current conduction mechanism in the oxide layer changes from electrode control Schottky emission in Sm 2 O 3 to bulk controlled space-charge-limited-current in Lu 2 O 3 . The barrier height extracted from Schottky emission model is 0.96 eV in Sm 2 O 3 thin film, while the activation energy of traps calculated from the Arrhenius plots is about 0.23 eV in Lu 2 O 3 thin film. Additionally, the Ni/Sm 2 O 3 /ITO flexible memory device shows promising RS behavior with very low power of operation ($30 lW) and small distribution of switching parameters. The memory reliability characteristics of switching endurance, data retention, good flexibility, and mechanical endurance show promising for future memory applications. The filament conduction model is adopted to describe the RS behavior in the Sm 2 O 3 and Lu 2 O 3 ReRAM devices. The improved RS performance in Sm 2 O 3 thin film is attributed to the different physical properties of the thin films. V C 2014 AIP Publishing LLC.

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Improved Resistance Switching Characteristics in Ti-Doped $\hbox{Yb}_{2}\hbox{O}_{3}$ for Resistive Nonvolatile Memory Devices

Cited by 23 publications

References 16 publications

A Novel Design and Modeling Paradigm for Memristor-Based Crossbar Circuits

A Novel Design and Modeling Paradigm for Memristor-Based Crossbar Circuits

Endurance and Cycle-to-cycle Uniformity Improvement in Tri-Layered CeO2/Ti/CeO2 Resistive Switching Devices by Changing Top Electrode Material

Current conduction and resistive switching characteristics of Sm2O3 and Lu2O3 thin films for low-power flexible memory applications

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