volume 25, issue 6, P1580-1584 1989
DOI: 10.1109/3.29296
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Abstract: A set of improved Langevin rate equations for external r; ~1 no 1 cavity semiconductor lasers is derived analytically, which can be used to solve transient as well as steady-state problems. A simple relationship among chirp reduction, line narrowing, and dynamic stability is

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