Improved phosphorous gettering of multicrystalline silicon

Manshanden, P.; Geerligs, L.J.

doi:10.1016/j.solmat.2005.05.015

Cited by 66 publications

(39 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Improved P gettering using a low temperature annealing after phosphorus diffusion has been proposed in several publications. [11][12][13] This clearly indicates that iron precipitation, as directly proposed and demonstrated by Buonassisi et al, 13 is also important in P gettering. The problem is that the segregation coefficient of iron to phosphorus doped layer is not well known.…”

Section: Modeling Boron Diffusion Gettering Of Iron In Silicon Solar mentioning

confidence: 66%

Modeling boron diffusion gettering of iron in silicon solar cells

Haarahiltunen

Talvitie

Savin

et al. 2008

Applied Physics Letters

View full text Add to dashboard Cite

In this paper, a model is presented for boron diffusion gettering of iron in silicon during thermal processing. In the model, both the segregation of iron due to high boron doping concentration and heterogeneous precipitation of iron to the surface of the wafer are taken into account. It is shown, by comparing simulated results with experimental ones, that this model can be used to estimate boron diffusion gettering efficiency of iron under a variety of processing conditions. Finally, the application of the model to phosphorus diffusion gettering is discussed.

show abstract

Section: Modeling Boron Diffusion Gettering Of Iron In Silicon Solar mentioning

confidence: 66%

Modeling boron diffusion gettering of iron in silicon solar cells

Haarahiltunen

Talvitie

Savin

et al. 2008

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…1 In the solar cell fabrication process, the detrimental impact of iron is commonly mitigated by the gettering of iron to the heavily phosphorus doped regions near the wafer surfaces, during the high temperature phosphorus diffusion process used for the p-n junction formation. [1][2][3][4][5] Heavy boron diffusion or aluminium alloying processes could also achieve similar gettering effects, if well integrated into the solar cell fabrication processes.…”

Section: Introductionmentioning

confidence: 99%

Gettering of interstitial iron in silicon by plasma-enhanced chemical vapour deposited silicon nitride films

Liu

Sun

Markevich

et al. 2016

Journal of Applied Physics

View full text Add to dashboard Cite

It is known that the interstitial iron concentration in silicon is reduced after annealing silicon wafers coated with plasma-enhanced chemical vapour deposited (PECVD) silicon nitride films. The underlying mechanism for the significant iron reduction has remained unclear and is investigated in this work. Secondary ion mass spectrometry (SIMS) depth profiling of iron is performed on annealed iron-contaminated single-crystalline silicon wafers passivated with PECVD silicon nitride films. SIMS measurements reveal a high concentration of iron uniformly distributed in the annealed silicon nitride films. This accumulation of iron in the silicon nitride film matches the interstitial iron loss in the silicon bulk. This finding conclusively shows that the interstitial iron is gettered by the silicon nitride films during annealing over a wide temperature range from 250 °C to 900 °C, via a segregation gettering effect. Further experimental evidence is presented to support this finding. Deep-level transient spectroscopy analysis shows that no new electrically active defects are formed in the silicon bulk after annealing iron-containing silicon with silicon nitride films, confirming that the interstitial iron loss is not due to a change in the chemical structure of iron related defects in the silicon bulk. In addition, once the annealed silicon nitride films are removed, subsequent high temperature processes do not result in any reappearance of iron. Finally, the experimentally measured iron decay kinetics are shown to agree with a model of iron diffusion to the surface gettering sites, indicating a diffusion-limited iron gettering process for temperatures below 700 °C. The gettering process is found to become reaction-limited at higher temperatures.

show abstract

“…This hypothesis has been recently confirmed by Buonassisi et al [2] in cooling experiments with intentionally doped mc-Si. Furthermore, a slow cool down or low temperature annealing after phosphorous diffusion gettering ("extended gettering") has been shown to increase the electron lifetime in p-type mc-Si wafers to an extent much greater than a standard gettering step at constant temperature [3,4,5,6]. So far it has not been clear whether internal (relaxation) gettering or external (segregation) gettering is the dominant process during a slow cool down under the presence of the phosphorous gettering layer.…”

Section: Introductionmentioning

confidence: 99%

Study of Internal versus External Gettering of Iron during Slow Cooling Processes for Silicon Solar Cell Fabrication

Hofstetter

Lelièvre

Cañizo

et al. 2009

SSP

View full text Add to dashboard Cite

Abstract. The effect of slow cooling after different high temperature treatments on the interstitial iron concentration and on the electron lifetime of p-type mc-Si wafers has been investigated. The respective impacts of internal relaxation gettering and external segregation gettering of metal impurities during an extended phosphorous diffusion gettering are studied. It is shown that the enhanced reduction of interstitial Fe during extended P-gettering is due to an enhanced segregation gettering while faster impurities like Cu and Ni are possibly reduced due to an internal gettering effect.

show abstract

Improved phosphorous gettering of multicrystalline silicon

Cited by 66 publications

References 17 publications

Modeling boron diffusion gettering of iron in silicon solar cells

Modeling boron diffusion gettering of iron in silicon solar cells

Gettering of interstitial iron in silicon by plasma-enhanced chemical vapour deposited silicon nitride films

Study of Internal versus External Gettering of Iron during Slow Cooling Processes for Silicon Solar Cell Fabrication

Contact Info

Product

Resources

About