Improved morphology for epitaxial growth on 4° off-axis 4H-SiC substrates

Leone, Stefano; Pedersen, Henrik; Henry, Anne; Kordina, Olof; Janzén, Erik

doi:10.1016/j.jcrysgro.2009.03.037

Cited by 48 publications

(55 citation statements)

References 24 publications

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“…In the layers grown using ethylene, triangular defects were formed similar to those previously reported for growth using propane (C 3 H 8 ) [22], while growth using methane resulted in a step bunched surface instead (Fig. 4).…”

Section: Resultssupporting

confidence: 79%

On the use of methane as a carbon precursor in Chemical Vapor Deposition of silicon carbide

Yazdanfar

Pedersen

Sukkaew

et al. 2014

Journal of Crystal Growth

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Abstract:It is generally considered that methane is not a suitable carbon precursor for growth of silicon carbide (SiC) epitaxial layers by chemical vapor deposition (CVD) since its use renders epitaxial layers with very high surface roughness. In this work we demonstrate that in fact SiC epitaxial layers with high-quality morphology can be grown using methane. It is shown that a key factor in obtaining high-quality material is tuning the C/Si ratio of the process gas mixture to a region where the growth is limited neither by carbon nor by silicon supplies. From the growth characteristics presented here, we argue that the reactivity of methane with the SiC surface is much higher than generally assumed in SiC CVD modeling today.

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Section: Resultssupporting

confidence: 79%

On the use of methane as a carbon precursor in Chemical Vapor Deposition of silicon carbide

Yazdanfar

Pedersen

Sukkaew

et al. 2014

Journal of Crystal Growth

Self Cite

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“…The triangular defects density decreases with decreasing C/Si ratio [79,88]. The formation of step bunching has been reported at very low or high C/Si ratio [98].…”

Section: C/si Ratiomentioning

confidence: 93%

“…The step bunching negatively influences the device performance [78] and it has been reported that the use of a low C/Si ratio during growth [71] as well as epitaxial growth on the C-face of the substrate [77] reduces the step bunching. Furthermore, it has been proposed that the density of the triangular defects could be decreased using a low C/Si ratio [79] or a higher Cl/Si ratio [80] during the growth.…”

Section: Epitaxial Layer Thickness = Tan(4°) × Triangular Defect Lengthmentioning

confidence: 99%

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Precursors and defect control for halogenated CVD of thick SiC epitaxial layers

Yazdanfar¹

2014

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“…12 However, the reduction of the off-cut angle generates another type of defects like 3C-inclusions 13 and in-grown SFs. [14][15][16][17][18][19][20] One can see on Table I that the types of SFs are numerous (Single / Double / 8H Shockley SFs, Intrinsic / Multilayered / Extrinsic Frank-type SFs...).…”

Section: Introductionmentioning

confidence: 99%

Application of UV photoluminescence imaging spectroscopy for stacking faults identification on thick, lightly n-type doped, 4°-off 4H-SiC epilayers

et al. 2015

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This paper deals with the description and the application of an original photoluminescence (PL) imaging technique on thick, lighly n-type doped 4H-SiC epilayers for in-grown stacking fault (SF) identification. This technique, call “photoluminescence imaging spectroscopy” (PLIS), compares different PL imaging pictures in order to create a new picture which displays the location and an approximation of the maximum photoemission wavelength of SFs at room temperature. Five types of SF have been detected and identified by PLIS on two different wafers. The origin of SF type modification during the growth is also discussed in this work.

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Improved morphology for epitaxial growth on 4° off-axis 4H-SiC substrates

Cited by 48 publications

References 24 publications

On the use of methane as a carbon precursor in Chemical Vapor Deposition of silicon carbide

On the use of methane as a carbon precursor in Chemical Vapor Deposition of silicon carbide

Precursors and defect control for halogenated CVD of thick SiC epitaxial layers

Application of UV photoluminescence imaging spectroscopy for stacking faults identification on thick, lightly n-type doped, 4°-off 4H-SiC epilayers

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