Improved luminescence and afterglow emission from Mn2+/Si4+ co-doped AlN by combustion synthesis method

Chen, Zhanglin; Cui, Wei; Zhu, Kaiming; Zhang, Chunguang; Zuo, Chuandong; Niu, Yude; Wang, Qi; Yuan, Xuanyi; Liu, Guanghua

doi:10.1016/j.jallcom.2021.160745

Cited by 20 publications

(7 citation statements)

References 35 publications

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“…AlN: Mo films.-Recent related studies indicate that the lattice constant ratio (c/a ratio) of the wurtzite structure greatly affects the piezoelectric coefficient e 33 (the smaller the c/a ratio, the higher the e 33 ). 9 Therefore, in this study, TOPAS software was used to calculate the c/a ratio of the AlN:Mo films based on the XRD analysis results, 10 and the c/a ratio was used to observe the changes in the trend of the piezoelectric coefficient e 33.…”

Section: Resultsmentioning

confidence: 99%

Investigation of Mo Doping Effects on the Properties of AlN-Based Piezoelectric Films Using a Sputtering Technique

Feng¹,

Li²,

Chen³

et al. 2022

ECS J. Solid State Sci. Technol.

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In this study, AlN-based films are deposited using a sputtering deposition method, and Mo dopants with different concentrations are added in the proposed system by controlling the sputtering power in order to improve the crystallinity and piezoelectric properties of AlN films. Through a detailed material analysis including energy-dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), piezoresponse force microscopy (PFM), and nano-indentation, the piezoelectric property optimization mechanism of proposed films was explored and the best process parameters were determined. The piezoelectric coefficient d33 of AlN:Mo (3.46%) films reached 7.33 pm V−1, which is 82.79% higher than that of undoped AlN. As compared with the reported data about the dopants in AlN system, our proposed films have the better d33 values with those dopants in AlN-based films except Sc dopants. However, Sc is known as an expensive metal, our proposed films could be applied to low-cost piezoelectric MEMS applications.

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Section: Resultsmentioning

confidence: 99%

Investigation of Mo Doping Effects on the Properties of AlN-Based Piezoelectric Films Using a Sputtering Technique

Feng¹,

Li²,

Chen³

et al. 2022

ECS J. Solid State Sci. Technol.

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“…The afterglow properties of SMSED are determined by the luminescence centre and the defects that act as traps [16, 17]. The kind and density of the defects directly influence their luminescence performance [18, 19]. As we know, some defects will be more or less introduced when the materials are subjected to high temperatures [20], especially for samples that need to be synthesized under reducing conditions.…”

Section: Introductionmentioning

confidence: 99%

The long rod‐shaped Sr₂MgSi₂O₇:Eu²⁺,Dy³⁺ with ultrahigh afterglow performance

Hai,

Qin,

Xiao

et al. 2024

Luminescence

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The afterglow properties of long afterglow luminescent materials are greatly affected by their defects, which are distributed on the grain surface. Increasing the exposed surface area is an important method to improve the afterglow performance. In this research, long rod‐shaped long afterglow materials Sr2MgSi2O7:Eu2+,Dy3+ were prepared using the hydrothermal‐coprecipitation method. When the reaction time reached 96 h, the length of the afterglow materials could grow to 2 mm, and the sintering temperature was just 1150°C. The emission spectra of all obtained samples upon excitation at 397 nm had a maximum of 465 nm, which belonged to the representative transition of Eu2+. The initial brightness was 1.35 cd/m2. The afterglow time could reach 19 h, giving a good afterglow performance. The research on this kind of material has essential significance in the exploration of luminescence mechanisms and their applications.

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“…Lanthanide coordination compounds are interesting because along with defects in the crystal lattice (physical traps), chemical traps can also be formed in them due to the presence of organic ligands with a conjugated pi-system and a large electron affinity. Whereas the luminescence properties of inorganic rare-earths compounds have been widely studied, [17][18][19][20][21] there is practically no information on the TL of lanthanide coordination compounds, although there is available information on TL in organic compounds, as well as in polymers. [22][23][24][25] Previously, we obtained interesting coordination compounds of terbium and dysprosium, which are able to store the energy from ultraviolet (UV) and X-ray radiation.…”

Section: Introductionmentioning

confidence: 99%

Thermoluminescent Tb(III) and Dy(III) complexes with redox‐active ligands: experimental and theoretical study

Emelina

Мирочник

2022

Luminescence

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Thermoluminescence and persistent luminescent materials with unique delayed emission have attracted much attention and exhibit great promise in optical information storage. In this manuscript, to reveal the thermoluminescence mechanism, a combined experimental and theoretical study of ternary Ln(NO3)2Acac(Phen)2 complexes, where Ln is Tb(III), Dy(III), Eu(III), Acac is acetylacetonate anion, and Phen is 1,10‐phenanthroline, was carried out. The terbium and dysprosium complexes had thermoluminescence properties, while the europium complex did not. A thermoluminescence mechanism is proposed: the powerful double π‐conjugate phenanthroline system appearance upon photoexcitation, the peculiarities of frontier orbitals, the abnormally small highest occupied molecular orbital–lowest unoccupied molecular orbital gap, and the geometrical changes in the terbium and dysprosium complexes led us to suggest that phenanthroline molecules serve as ‘chemical’ electron traps. Therefore, we succeeded in ‘freezing’ and storing the excited state of complexes I and II indefinitely. The obtained thermoluminescent materials with ‘chemical’ traps of electrons are capable of storing the energy from incident photons and exhibit a great opportunity in optical information storage and anticounterfeiting applications.

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Improved luminescence and afterglow emission from Mn2+/Si4+ co-doped AlN by combustion synthesis method

Cited by 20 publications

References 35 publications

Investigation of Mo Doping Effects on the Properties of AlN-Based Piezoelectric Films Using a Sputtering Technique

Investigation of Mo Doping Effects on the Properties of AlN-Based Piezoelectric Films Using a Sputtering Technique

The long rod‐shaped Sr₂MgSi₂O₇:Eu²⁺,Dy³⁺ with ultrahigh afterglow performance

Thermoluminescent Tb(III) and Dy(III) complexes with redox‐active ligands: experimental and theoretical study

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Improved luminescence and afterglow emission from Mn2+/Si4+ co-doped AlN by combustion synthesis method

Cited by 20 publications

References 35 publications

Investigation of Mo Doping Effects on the Properties of AlN-Based Piezoelectric Films Using a Sputtering Technique

Investigation of Mo Doping Effects on the Properties of AlN-Based Piezoelectric Films Using a Sputtering Technique

The long rod‐shaped Sr2MgSi2O7:Eu2+,Dy3+ with ultrahigh afterglow performance

Thermoluminescent Tb(III) and Dy(III) complexes with redox‐active ligands: experimental and theoretical study

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The long rod‐shaped Sr₂MgSi₂O₇:Eu²⁺,Dy³⁺ with ultrahigh afterglow performance