Gate driver has been applied in many ways, exemplified by that, by using the DC-isolated and AC-pass characteristics of gate driver's primary and secondary sides, the problem of floating endpoint in semiconductor power switch can be solved. However, the conventional design of isolated gate driver provides circuit voltage blocking by optically coupled components. Due to the need for optoelectronic conversion, it requires III-VI semiconductor process and non-standard CMOS process, and the cost is always high. Therefore, in order to better solve the above mentioned problem, an electronic isolated gate driver is proposed. It employs an on-chip transformer to provide voltage isolation between the primary and secondary sides of the circuit, and converts the control signal in the circuit into a highfrequency modulated signal, which in the secondary side is then demodulated by the rectifier through the on-chip transformer to produce the original control signal. The miniaturized isolated gate driver proposed herein adopts TSMC T25HVG2 process and uses an on-chip transformer design in lieu of an optically coupled components. As the amplitude shift keying, on-chip transformer, full-wave quadruple rectifier and data buffer amplifier involved in this design are all integrated on the same chip, the integration can be improved. The size can be smaller than the generally separating electronic isolated gate driver, with the interference from external noise being reduced. In addition, the proposed gate driver generates large signals, in terms of chip layout, therefore, the circuit is put inside the on-chip transformer, which can further save area.