Impact of strain on free-exciton resonance energies in wurtzite AlN

Ikeda, Hirokatsu; Okamura, Takahiro; Matsukawa, Kodai; Sota, Takayuki; Sugawara, Mariko; Hoshi, Takayuki; Cantu, P.; Sharma, Rajat; Kaeding, John F.; Keller, S.; Mishra, Umesh K.; Kosaka, Koji; Asai, Keiichiro; Sumiya, S.; Shibata, Tomohiko; Tanaka, Mitsuhiro; Speck, James S.; DenBaars, Steven P.; Nakamura, Shuji; Koyama, Takahiro; Onuma, Takeyoshi; Chichibu, S. F.

doi:10.1063/1.2825577

Cited by 48 publications

(38 citation statements)

References 29 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…According to reference [4], 0.868 appears to be the value the most compatible with experimental reports, compared to the alternate 0.833 value. There o many digits in these ratio and using one or another just leads to a non impacting 4 percent change in γ.…”

Section: -P3supporting

confidence: 69%

“…The crystal field splitting of bulk AlN has been identified as being negative contrarily to the GaN, InN and CdS case [3], which gives an interesting and well marked anisotropy of the optical response of this material. The optical properties of epilayers are in addition modified in relation with builtin strain fields and experimental values of the excitonic deformation potentials were recently proposed [4][5][6][7]. The evolution of the optical properties of AlN epilayers grown on various substrates are now well accounted for by models which were fruitfully applied to GaN [8], ZnO [9].…”

Section: Introductionmentioning

confidence: 99%

“…In Figure 3 are plotted versus A 2 , the values of A 1 compatible with Σ = 38 meV obtained using electron masses m e = 0.32 and m e⊥ = 0.28, which are "average" theoretical values [11] (their choice is not impacting very much the rest of this paper in fact) using the different couples of the dielectric constant [4,27,28] given in Table 2.…”

Section: Comparison With Experimentsmentioning

confidence: 99%

“…There o many digits in these ratio and using one or another just leads to a non impacting 4 percent change in γ. We followed reference [4] and decided to take ratio 0.87. This decision does not impact very much the message in this article.…”

Section: -P3mentioning

confidence: 99%

See 3 more Smart Citations

Quantitative interpretation of the excitonic splittings in aluminum nitride

Gil

Guizal

Felbacq

et al. 2011

Eur. Phys. J. Appl. Phys.

View full text Add to dashboard Cite

Abstract.We address the interpretation of the splitting between the ground state excitonic transition which indicates the energy of the lowest direct band gap in AlN bulk films and epilayers, and a 36-38 meV higher energy companion. We demonstrate that this splitting is consistent with the initial interpretation in terms of 1s-2s excitonic splitting by using a calculation of the exciton binding energy which includes mass anisotropy and anisotropy of the dielectric constant. Analytical expressions are proposed to compute the evolution of 1s and 2s excitonic energies using an anisotropy parameter. We show that the values of the dielectric constant that are required to fit the data are ε ⊥ ≈ 8.7 and ε ≈ 10, values different from the couple of values ε ⊥ ≈ 7.33 and ε ≈ 8.45 erroneously obtained after a fitting procedure using a spherical description of the long range Coulomb interaction and the classical textbook n −2 spectrum of the excitonic eigenstates. Starting from now, our values are the recommended ones.

show abstract

Section: -P3supporting

confidence: 69%

Section: Introductionmentioning

confidence: 99%

Section: Comparison With Experimentsmentioning

confidence: 99%

Section: -P3mentioning

confidence: 99%

See 2 more Smart Citations

Quantitative interpretation of the excitonic splittings in aluminum nitride

Gil

Guizal

Felbacq

et al. 2011

Eur. Phys. J. Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…The ratio ε S⊥ /ε S is 0.831, which is only slightly lower than estimated earlier. 38 The geometric mean value ε S = √ ε S⊥ ε S = 8.39 is frequently used as an estimate of an isotropic equivalent for the static dielectric constant.…”

Section: B High-frequency and Static Dielectric Constantsmentioning

confidence: 99%

Anisotropic absorption and emission of bulk(11¯00)AlN

et al. 2013

View full text Add to dashboard Cite

The intrinsic anisotropic optical properties of wurtzite AlN are investigated in absorption and emission. Full access to the anisotropy of the optical response of the hexagonal material is obtained by investigating the (1100) plane of a high-quality bulk crystal allowing electric field E polarization perpendicular (E ⊥ c) and parallel (E c) to the optical axis c. Spectroscopic ellipsometry yields the ordinary (ε ⊥ ) and extraordinary (ε ) dielectric functions (DFs) from 0.58 up to 20 eV. The comparison of the experimental data with recently calculated DFs demonstrates that Coulomb interaction has a strong impact not only on the spectral dependence around the fundamental absorption edge but also on the high-energy features usually discussed in terms of van Hove singularities. The fits of the second-order derivatives of ε and ε ⊥ provide the transition energies for the main features in this range. The DFs close to the fundamental absorption edge, dominated by free excitons, exciton-phonon complexes, and the exciton continuum, are independently confirmed by reflectivity and synchrotron-based photoluminescence excitation studies. Values for the band gaps, the crystal field ( cf = −221 ± 2 meV), and spin-orbit splittings ( so = 13 ± 2 meV) are obtained. Furthermore, we obtain accurate values for the static dielectric constants of ε S⊥ = 7.65 and ε S = 9.21, entering, e.g., the calculations of exciton binding energies. Photoluminescence is used to investigate the emission properties of the same sample.

show abstract

Sharp bound and free exciton lines from homoepitaxial AlN

Feneberg

Neuschl

Thonke

et al. 2011

Physica Status Solidi (a)

View full text Add to dashboard Cite

MOCVD AlN layers grown in c-direction on PVT bulk AlN substrates are investigated by high-resolution photoluminescence in the energy region of the band gap. The experiments allow for observation of different donor bound exciton lines with a full width at half maximum below 0.5 meV. Assignments are suggested for the substitutional shallow donors silicon and oxygen. The visibility of an excited state of the free exciton with a hole from the highest valence band allows to determine the exciton binding energy to 52.4 meV by use of a simple hydrogen model. The resulting band gap energy is 6.094 eV at 10 K. Comparison with earlier reports on homoepitaxial AlN leads to a new identification of the bands reported there.

show abstract

Impact of strain on free-exciton resonance energies in wurtzite AlN

Cited by 48 publications

References 29 publications

Quantitative interpretation of the excitonic splittings in aluminum nitride

Quantitative interpretation of the excitonic splittings in aluminum nitride

Anisotropic absorption and emission of bulk(11¯00)AlN

Sharp bound and free exciton lines from homoepitaxial AlN

Contact Info

Product

Resources

About