Impact of intraband relaxation on the performance of a quantum-dot laser

Markus, A.; Chen, J.X.; Gauthier-Lafaye, Olivier; Provost, J.-G.; Paranthoën, Cyril; Fiore, Andrea

doi:10.1109/jstqe.2003.819494

Cited by 145 publications

(98 citation statements)

References 21 publications

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“…13 The interlevel relaxation time 0 was fixed to 7 ps as previously determined from fitting of LI characteristics of single-section lasers. 6,7 This is close to values determined by other techniques [14][15][16] and predicted by theory. 17 The capture time c , whose value was checked not to play an important role, was fixed to 10 ps.…”

Section: Results and Calculationssupporting

confidence: 89%

“…Ridge-waveguide ͑ridge width= 4 m͒ edge-emitting lasers have been fabricated from this structure with as cleaved facets, as already reported. 6,7 These devices operate on the GS transition at 1.28 m for a cavity length l Ͼ 2.5 mm and on the ES transition at 1.22 m for a cavity length l Ͻ 1.5 mm. For an intermediate cavity length of 1.5 mmϽ l Ͻ 2.5 mm lasing takes place on both GS and ES transitions due to a combination of GS gain saturation and a slow intraband relaxation time.…”

Section: Results and Calculationsmentioning

confidence: 99%

“…For an intermediate cavity length of 1.5 mmϽ l Ͻ 2.5 mm lasing takes place on both GS and ES transitions due to a combination of GS gain saturation and a slow intraband relaxation time. 6,7 The two-section lasers discussed in this letter have a 30 m long and 0.15 m deep etched gap in the ridge, which separates the p-type contact into two sections. The resistance between the two contacts was measured to be about 10 k⍀.…”

Section: Results and Calculationsmentioning

confidence: 99%

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Two-state switching and dynamics in quantum dot two-section lasers

Markus

Rossetti

Calligari

et al. 2006

Journal of Applied Physics

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Scollo, R. (2006). Two-state switching and dynamics in quantum dot two-section lasers. Journal of Applied Physics, 100 (11) Please check the document version of this publication:• A submitted manuscript is the version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publicationGeneral rights Copyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal.If the publication is distributed under the terms of Article 25fa of the Dutch Copyright Act, indicated by the "Taverne" license above, please follow below link for the End User Agreement: www.tue.nl/taverne Take down policyIf you believe that this document breaches copyright please contact us at:openaccess@tue.nl providing details and we will investigate your claim. The electrical control of the lasing wavelength in two-section quantum dot lasers is investigated. By changing the optical loss in the absorber section, the control of the ground-state ͑GS͒ and excited-state ͑ES͒ lasing thresholds and output powers is achieved. Additionally, a complex self-pulsation dynamics with simultaneous oscillations of the GS and ES intensities is observed. The experimental results are well explained in the framework of a rate equation model.

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Section: Results and Calculationssupporting

confidence: 89%

Section: Results and Calculationsmentioning

confidence: 99%

Section: Results and Calculationsmentioning

confidence: 99%

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Two-state switching and dynamics in quantum dot two-section lasers

Markus

Rossetti

Calligari

et al. 2006

Journal of Applied Physics

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“…Stacking more QD layers into the active region should result in higher modal gain, allowing laser emission from shorter cavities compatible with 10 Gb/s direct modulation. As the K-factor is about 2 times lower than that of standard InAs/GaAs QD layer structures 21 lower than that of InAs/GaAs QDs lasers, where strong damping was attributed to carrier relaxation from the ES to the GS (so-called phonon relaxation bottleneck 20 ). Surprisingly, the peak of the relaxation oscillation is clearly distinguishable in the modulation transfer function of the InAs/InP (311)B QD lasers (inset Fig.4).…”

mentioning

confidence: 90%

“…Reduced non linear gain compression and the absence of ES emission at high injection current in InAs/InP (311)B QD lasers result in a smaller rate of decrease of the differential gain with the current density compared to 5-InAs/GaAs QD layer structures 18 . This explains why no divergence of the Henry factor is observed at high injection current, unlike InAs/GaAs QD lasers where it was attributed to incomplete gain clamping of the ES at the GS threshold gain 20 . The LEF was also measured on two other longitudinal modes at 1517 and 1527 nm (i.e.…”

mentioning

confidence: 96%

Dynamic properties of InAs∕InP (311)B quantum dot Fabry–Perot lasers emitting at 1.52μm

Martinez

Merghem

Bouchoule

et al. 2008

Applied Physics Letters

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Stability of Optically Injected Two‐State Quantum‐Dot Lasers

et al. 2017

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Simultaneous two-state lasing is a unique property of semiconductor quantum-dot (QD) lasers. This not only changes steady-state characteristics of the laser device but also its dynamic response to perturbations. In this paper we investigate the dynamic stability of QD lasers in an external optical injection setup. Compared to conventional single-state laser devices, we find a strong suppression of dynamical instabilities in two-state lasers. Furthermore, depending on the frequency and intensity of the injected light, pronounced areas of bistability between both lasing frequencies appear, which can be employed for fast optical switching in all-optical photonic computing applications. These results emphasize the suitability of QD semiconductor lasers in future integrated optoelectronic systems where a high level of stability is required.

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Impact of intraband relaxation on the performance of a quantum-dot laser

Cited by 145 publications

References 21 publications

Two-state switching and dynamics in quantum dot two-section lasers

Two-state switching and dynamics in quantum dot two-section lasers

Dynamic properties of InAs∕InP (311)B quantum dot Fabry–Perot lasers emitting at 1.52μm

Stability of Optically Injected Two‐State Quantum‐Dot Lasers

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