Impact of hot-carrier degradation on the low-frequency noise in MOSFETs under steady-state and periodic large-signal excitation

Abstract

This letter reports the diagnostic power of the low-frequency noise analysis (steady-state and periodic large-signal excitation) in MOSFETs subjected to hot-carrier degradation. The LF noise under periodic large-signal excitation is shown to increase more rapidly than the LF noise in steady-state. Moreover the improvement in the LF noise performance due to periodic large-signal excitation, observed for fresh devices, gradually diminishes as the devices are subjected to hot-carrier stress.

RF stress effects on CMOS LC-loaded VCO reliability evaluated by experiments

“…Hot-carrier induced traps are known to produce the same kind of noise from traps at the SiO 2 and Si interface [27]. In addition, the low frequency noise under periodic large-signal excitation increases more rapidly due to hot-carrier degradation as compared to the low frequency noise measured under steady state [28]. The current reused VCO here is indeed under large signal RF excitation.…”