Impact Ionization Behavior in Bulk Fin Field Effect Transistors with Fin Body Width and Bias Conditions

Abstract

The impact ionization behavior of bulk fin field effect transistors (FinFETs) was investigated with respect to fin body width (W fin ) and bias conditions. As fin width decreases to less than about 50 nm, the effect of parasitic source/drain series resistance becomes significant, resulting in a decrease in the impact ionization rate due to the increasing voltage drop across the resistance. We analyzed the I SUB =I D trend depending on the bias conditions (V GS ¼ V DS and V GS ¼ V DS =2) for devices with a W fin thicker than 50 nm. Through two-dimensional device simulation, we showed the voltage drop and the peak electron temperature for various W fin . It was also shown that the contact resistivity between the source/drain and the metal electrode is very important in the bulk FinFET with a very thin fin width.

New Hot-Carrier Injection Mechanism at Source Side in Nanoscale Floating-Body MOSFETs

“…Recently, the impact ionization (II) behavior of a bulk FinFET was reported to depend on fin width and bias condition similar to the work in this letter [5], [6]. However, the body of the devices is tied, and thus, the profile of the potential across the channel of the devices is different from that of the floating-body devices under certain stress conditions, which exhibit unusual features affecting their reliability.…”

“…These results are in agreement with the simulation results in Section II. Note that degradation decreases as W fin decreases for V GS = 1.6 V due to better electric confinement [3] and/or higher series resistance [5], [6], as shown in Fig. 3(a).…”

Reliability performance characterization of SOI FinFETs

“…The self-heating can be partly resolved by implementing socalled body-tied (BT) or bulk FinFETs [37,[42][43][44][45][46], represented in Fig. 10.…”