MRS Proc. 2001 DOI: 10.1557/proc-706-z11.8.1 View full text
Marcus Freitag, A. T. Johnson

Abstract: AbstractWe use scanning gate microscopy to precisely locate the gating response in single-wall nanotube devices. Junctions of metallic and semiconducting nanotubes show a dramatic increase in transport current when they are electrostatically doped with holes at the junction. We ascribe this behavior to the turn-on of a reverse biased Schottky barrier. A similar effect is seen in field-effect transistors made from an individual semiconducting single-wall carbon nanotube. In this case, there are two Schottky bar…

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