III–V compound materials and lasers on silicon

Abstract

Silicon-based photonic integration has attracted the interest of semiconductor scientists because it has high luminous efficiency and electron mobility. Breakthroughs have been made in silicon-based integrated lasers over the past few decades. Here we review three main methods of integration of III–V materials on Si, namely direct growth, bonding, and selective-area hetero-epitaxy. The III–V materials we introduced mainly include materials such as GaAs and InP. The lasers are mainly lasers of related communication bands. We also introduced the advantages and challenges of the three methods.

Synthesis and characterization of TiO2/graphene oxide nanocomposites for photoreduction of heavy metal ions in reverse osmosis concentrate

“…Moreover, the D and G band values shied towards the lower values and the D/G intensity ratio (I D /I G ) decreasing from 0.927 to 0.908 showed that the GO had been well reduced to rGO. 45 The D/G intensity ratio (I D /I G ) roughly correlates to the amount of the graphene clusters and defects in the disordered carbon. 15 The I D /I G ratios of TiO 2 /GO-8 and TiO 2 /rGO nanocomposites are 0.927 and 0.908, respectively, both of which are higher than GO (0.896).…”

Depolarization induced III–V triatomic layers with tristable polarization states

“…Several approaches such as direct growth of III–V on Si, III–V on lattice engineered substrates, and III–V on Ge–Si templates have been developed to integrate III–V compounds with the cutting-edge modern complementary metal oxide semiconductor (CMOS) technology. 21,22 Therefore, III–V semiconductor-based 2D ferroelectrics, if available, will reduce the barrier of integrating ferroelectric functionalities with silicon-based technology and lower the cost of commercialization.…”

Enhanced photocatalytic water splitting with two-dimensional van der Waals heterostructures of BAs/WTeSe

“…[15][16][17][18][19][20][21] Arsenide semiconductors, such as boron arsenide (BAs), 22 aluminum arsenide (AlAs), 23 gallium arsenide (GaAs), 5,24 and indium arsenide (InAs), 25 have emerged as promising candidates for vdWHs due to their favorable band alignments and light absorption properties. These materials belong to groups III-V of compound semiconductor materials [26][27][28][29] and play a vital role in making microwave devices, 30,31 Hall devices, 32 high-speed digital circuits, 33 lasers, 34,35 magneto-resistive devices, 7,35 and detectors. 36 Hexagonal BAs monolayer with a flat honeycomb structure like graphene has drawn attention as a potential photocatalyst for water splitting.…”