Identification and thermal stability of the native oxides on InGaAs using synchrotron radiation based photoemission

Brennan, Barry; Hughes, Greg

doi:10.1063/1.3475499

Cited by 88 publications

(77 citation statements)

References 48 publications

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“…8,22 It is worth pointing out that the exact nature of these states is still a matter of investigation with a number of different studies claiming varying assignments. [21][22][23][24][25] For example, while our assignment of As-H in this case is consistent with the binding energy position reported by Beerbom et al in Ref. 22, As-H itself would be unlikely to survive the elevated temperatures seen by the sample in the ALD reactor, and as such further work is needed to accurately identify the exact chemical composition of the peaks.…”

Section: Resultssupporting

confidence: 73%

“…For the native oxide sample, the In-AlAs bulk peak at 444.38 6 0.025 eV is observed, as well as 3 oxide states, labeled In 1þ, In 3þ, and In-OH, separated from the bulk peak by 0.45 eV, 0.82 eV, and 1.25 eV, respectively, and tentatively assigned to In 2 O, In 2 O 3 , and an In hydroxide state (In (OH) 3 ). 21,29 There is also some evidence for the presence of a lower binding energy peak, labeled In-, shifted from the FIG. 2.…”

Section: Resultsmentioning

confidence: 99%

“…20 However, in this study, the intrinsically narrow peak width of the As 3d core level (due to the smaller core-hole life time and correspondingly smaller Lorentzian component) is utilized. This allows for easier deconvolution of the peaks, especially considering the small binding energy (BE) separation between the individual peak components, 21 as will be discussed later. All peak deconvolutions and trends in the changes of the surface compositions from the As 3d spectra were correlated to those from the corresponding higher BE peaks by concurrently fitting the As 2p spectra, however, due to the increased error associated with the broader peaks, for clarity, only As 3d spectra are presented here.…”

Section: Methodsmentioning

confidence: 99%

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Chemical and electrical characterization of the HfO2/InAlAs interface

Brennan

Galatage

Thomas

et al. 2013

Journal of Applied Physics

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InAlAs has the potential to be used as a barrier layer in buried channel quantum well field effect transistor devices due to favorable lattice-matching and carrier confinement properties with InGaAs. Field effect device structures of this nature may also require a high-k oxide deposited on the InAlAs surface to reduce leakage current. This study investigates the impact of surface preparations and atomic layer deposition of HfO2 on these surfaces using x-ray photoelectron spectroscopy to analyse the chemical interactions taking place, as well as the electrical performance of associated capacitor devices. A large concentration of As related surface features is observed at the InAlAs surface, and is attributed to a large D-it response in electrical measurements. (C) 2013 AIP Publishing LLC

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Section: Resultssupporting

confidence: 73%

Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

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Chemical and electrical characterization of the HfO2/InAlAs interface

Brennan

Galatage

Thomas

et al. 2013

Journal of Applied Physics

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“…This is the case for As 3d spectra taken at a low photon energy of 170 eV if we assume the same binding energy for As-Ga and As-In. 25 According to Fig. 3(a), we thus obtain the amount of 0.28 6 0.04 eV for the total band bending DE GaAs þ DE InAs .…”

Section: Discussionmentioning

confidence: 99%

“…A green fitted doublet at around 19.6 eV and 20.1 eV is assigned to Ga-oxides, probably consisting of several sub-oxides. 25 Furthermore, the tail of a large O 2s peak from the SiO x substrate overlaps in the range of 20-21 eV (cyan). Fig.…”

Section: B Shelling Effectmentioning

confidence: 99%

Band bending at the heterointerface of GaAs/InAs core/shell nanowires monitored by synchrotron X-ray photoelectron spectroscopy

Khanbabaee

Bussone

Knutsson

et al. 2016

Journal of Applied Physics

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Unique electronic properties of semiconductor heterostructured nanowires make them useful for future nano-electronic devices. Here, we present a study of the band bending effect at the heterointerface of GaAs/InAs core/shell nanowires by means of synchrotron based X-ray photoelectron spectroscopy. Different Ga, In, and As core-levels of the nanowire constituents have been monitored prior to and after cleaning from native oxides. The cleaning process mainly affected the Asoxides and was accompanied by an energy shift of the core-level spectra towards lower binding energy, suggesting that the As-oxides turn the nanowire surfaces to n-type. After cleaning, both As and Ga core-levels revealed an energy shift of about À0.3 eV for core/shell compared to core reference nanowires. With respect to depth dependence and in agreement with calculated strain distribution and electron quantum confinement, the observed energy shift is interpreted by band bending of core-levels at the heterointerface between the GaAs nanowire core and the InAs shell. Published by AIP Publishing. [http://dx

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Semiconductor‐insulator Interfaces, High κ Dielectrics on (In)GaAs

Lin

Chang

et al. 2014

Wiley Encyclopedia of Electrical and Electronics Engineering

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Recent development of high κ dielectric oxides on (In) GaAs is reviewed in the fields of electronic structure and electric performance; this includes studies of (In) GaAs surfaces with various surface reconstructions, different orientations, and Indium contents, and of high κ/(In) GaAs interfaces. The oxide deposition was carried out using atomic‐layer deposition ( ALD ) and molecular beam epitaxy ( MBE ) via ex‐situ or in‐situ methods. For the former approach, the semiconductor surfaces prior to the oxide deposition were obtained via chemical, arsenic‐cap or annealing treatments. For the latter, the high k's were deposited on pristine freshly MBE ‐grown (In) GaAs surfaces without any treatments. Surface being treated or not clearly determines the quality of the oxide interface which delivers different interfacial electronic structure and electric performance. Without exception, the ex‐situ treated samples show remnant native oxides, which are never found in the in‐situ samples. The electronic structure has been investigated using photoemission measurements, in which the photon energy was provided by X ‐ray and synchrotron radiation. The discussion on high κ/(In) GaAs interfaces has been further extended to the electrical characterization including extraction of interfacial trap densities ( D it 's). Especially, the distinct electrical characteristics of the In 0.2 Ga 0.8 As metal‐oxide‐semiconductor capacitors ( MOSCAPs ) using MBE ‐ Ga 2 O 3 ( Gd 2 O 3 ) and ALD ‐ Al 2 O 3 as the gate are elucidated. Finally, a summary and bench‐marking of the recent advances on enhancement mode III ‐ V (In) GaAs MOSFETs is given, which reveals the great potential of inversion‐channel (In) GaAs MOSFETs for ultimate complementary MOS ( CMOS ) applications.

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Identification and thermal stability of the native oxides on InGaAs using synchrotron radiation based photoemission

Cited by 88 publications

References 48 publications

Chemical and electrical characterization of the HfO2/InAlAs interface

Chemical and electrical characterization of the HfO2/InAlAs interface

Band bending at the heterointerface of GaAs/InAs core/shell nanowires monitored by synchrotron X-ray photoelectron spectroscopy

Semiconductor‐insulator Interfaces, High κ Dielectrics on (In)GaAs

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