<i>p</i>-on-<i>n</i> heterojunctions of (Hg,Cd)Te by molecular-beam epitaxy: Controlled silver doping and compositional grading

Peterman, D. J.; Wroge, M. L.; Morris, B. J.; Leopold, D. J.; Broerman, J. G.

doi:10.1063/1.341092

Cited by 15 publications

(1 citation statement)

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“…Indium is established as a relatively well-behaved donor in CMT grown by MBE while it has have been more difficult to find a good extrinsic acceptor dopant. In recent years, attention has been focused on arsenic, 3,4 although previously the use of silver [5][6][7][8][9] and lithium 10 has been reported. Arsenic is a slow diffuser, but appears to require complicated growth and/or processing techniques in order to achieve good activation ͑electrical efficiency of dopant͒ in MBE-grown material.…”

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confidence: 99%

Auger suppression in CdHgTe heterostructure diodes grown by molecular beam epitaxy using silver as acceptor dopant

Skauli

Steen

Colin

et al. 1996

Applied Physics Letters

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Negative differential resistance due to Auger suppression is demonstrated in CdHgTe diodes grown by molecular beam epitaxy (MBE) using silver as acceptor dopant. These devices require growth of relatively complicated heterostructures, and control of n- and p-type doping over a large range. For this reason, the use of silver as an acceptor in CdHgTe devices grown by MBE has been reexamined. The results show that the diffusion of silver at the growth temperature does not necessarily preclude the use of silver doping in devices. For concentrations up to high 1017 cm−3, silver appears to be fully electrically active.

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confidence: 99%