Hydrogen concentration profiles in as-deposited and annealed phosphorus-doped silicon dioxide films

Abstract

Hydrogen concentration depth profiles in as-deposited and annealed phosphorus-doped silicon dioxide films were measured using the nuclear reaction profiling technique with 6.4 MeV 15N ion beam. The H2/Ar annealing of 450 °C for 60 min in furnace and the rapid thermal annealing at 1000 °C for 60 s in O2 or H2/Ar were carried out. It is found that hydrogen concentration is in the range of 1021–1022 per cm3 in as-deposited films. Annealing at high temperatures, even in a hydrogen containing medium, lowers the hydrogen concentration in all films. The hydrogen concentration gradually increased with time when the films were left in the room environment. The electrical properties of the oxide are found to be related to the presence of hydrogen. The observed correlation between the flatband voltage and the hydrogen concentration is presented and discussed.

Nonlinear relaxational polarization in aluminum oxide

“…The Al 2 O 3 atomic number density is 2.3×10 28 m -3 . Note that incorporation of such high concentration of hydrogen was also observed in the case of as prepared SiO 2 (10 28 m -3 ) [14] and Si 3 N 4 (1.7×10 28 m -3 ) [15] thin films, which was also revealed by a radioactive method. Furthermore for SiO 2 the hydrogen concentration is found to be increased with the time when the films were left in the ambient [14].…”