volume 8, issue 4, P1098-1101 2018
DOI: 10.1109/jphotov.2018.2838447
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Abstract: Amorphous hydrogenated silicon (a-Si:H) is an important material for surface defect passivation of photovoltaic silicon (Si) wafers in order to reduce their recombination losses. The material is however unstable with regards to hydrogen (H) desorption at elevated temperatures, which can be an issue during processing and device manufacturing. In this work we determine the temperature stability of a-Si:H by structural characterization of a-Si:H/Si bilayers with neutron-(NR) and X-ray reflectometry (XRR) combine…

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