Hydrogen barriers for SrBi2Ta2O9-based ferroelectric memories

Yang, Bee Lyong; Suh, Chung Won; Lee, C. G.; Kang, E. Y.; Kang, Young Min; Lee, S. S.; Hong, Suk-Kyoung; Kang, Nam Soo; Yang, Jie

doi:10.1063/1.1289913

Cited by 16 publications

(3 citation statements)

References 14 publications

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“…It is interpreted as a built-up interface potential induced by the hydrogen and in turn the lowering of the Schottky barrier height [26,27]. Several consistent results and mechanisms have been published by NEC [30][31][32][33], Fujitsu [34,35], Hyundai [36,37], Argonne National Laboratory [38][39][40], etc. Meanwhile, several technical routines have been proposed to avoid such hydrogen damage in actual LSI/ULSI fabrication processes [31,32,35,36,[41][42][43].…”

Section: Introductionmentioning

confidence: 63%

Hydrogen-Sensitive Amorphous Ferroelectric Thin Film Capacitive Devices

Zhu

Chen

Tan

et al. 2002

Integrated Ferroelectrics

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Amorphous ferroelectric thin film capacitive gas sensors with a largely improved sensitivity to hydrogen have been developed recently, showing a great promising potential for the next generation hydrogen detection technology. This review presents an overall picture of amorphous ferroelectric thin film hydrogen gas sensors, starting from the hydrogen-damage phenomena of ferroelectric thin films during the forming gas annealing (FGA) process. It stresses on the correlation among processing, microstructural evolution and electric properties of amorphous ferroelectric thin films for fabrication concerns. An attempt is made to detail the hydrogen sensitivity and transient response of various prototype capacitive devices with respect to the instinct of the films and the hydrogen kinetic processes in the Pd/ferroelectric heterostructure. Recent advances on the hydrogen-damage mechanism of ferroelectric thin films and the hydrogen interface-blocking model for amorphous ferroelectric gas sensors are also described.

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Section: Introductionmentioning

confidence: 63%

Hydrogen-Sensitive Amorphous Ferroelectric Thin Film Capacitive Devices

Zhu

Chen

Tan

et al. 2002

Integrated Ferroelectrics

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“…Unfortunately, the reducing ambient associated with the FGA degrades polarization characteristics of the PZT films substantially [1][2][3][4][5][6]. Hydrogen diffusion into the PZT layer and resultant hydroxyl bond (OH -) formation is suggested as a primary mechanism of low temperature FGA induced degradation [7][8][9].…”

Section: Introductionmentioning

confidence: 99%

Alumina as a Hydrogen Barrier Layer for FeRAM Devices

Chowdhury

Kim

Wallace

2007

2007 Non-Volatile Memory Technology Symposium

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Alumina ("AlOx") thin films are evaluated as a hydrogen diffusion barrier for ferroelectric memory devices. Ferroelectric capacitors (FeCAP) covered with the barrier is used in this study. The capacitor is annealed in a deuterated forming gas (DFG) ambient according to back-end-of-line (BEOL) thermal budget. The deuterium profile inside the stack structure is analyzed by Secondary Ion Mass Spectrometry (SIMS) to characterize the performance of alumina as a hydrogen barrier. The electrical performance of the FeCAP structure with alumina barrier is measured before and after the DFG anneal. Pulse saturation curves and P-V curves and electrical characteristics associated switched polarization, remnant polarization and saturation polarization are discussed as a performance of the FeCAPs. These parameters are compared before and after the annealing to examine any degradation due to deuterium diffusion.

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“…One of the effective methods is to form an encapsulation layer on ferroelectric capacitors, which is believed to play a role as a hydrogen protection barrier. The alumina thin film by a sputtering method was reported (6). However, the investigation of the materials for better encapsulation properties as well as the development of chemically deposition of the material for ferroelectric capacitors with more complicated structure, like the three-dimensional capacitors are still necessary to realize highly integrated FeRAM devices.…”

Section: Introductionmentioning

confidence: 99%

Amorphous Carbon Film Deposition for Hydrogen Barrier in FeRAM Integration by Radio Frequency Plasma Chemical Vapor Deposition Method

et al. 2009

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Amorphous carbon (α-C) films were deposited on PbLaZrTiOx (PLZT) capacitors by a radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) method. The α-C films of 20nm prepared with different deposition pressure, methane concentration and RF power were investigated as a hydrogen barrier layer for ferroelectric random access memory (FeRAM) integration. The α- C films contained atomic hydrogen as shown by Fourier transform infrared spectrometry (FT-IR) and exhibited a possibility to suppress the hydrogen degradation of ferroelectric properties.

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Hydrogen barriers for SrBi2Ta2O9-based ferroelectric memories

Cited by 16 publications

References 14 publications

Hydrogen-Sensitive Amorphous Ferroelectric Thin Film Capacitive Devices

Hydrogen-Sensitive Amorphous Ferroelectric Thin Film Capacitive Devices

Alumina as a Hydrogen Barrier Layer for FeRAM Devices

Amorphous Carbon Film Deposition for Hydrogen Barrier in FeRAM Integration by Radio Frequency Plasma Chemical Vapor Deposition Method

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