Hydrogen-acceptor pairing in CdTe epitaxial layers grown by OMVPE

As Doping in (Hg,Cd)Te: An Alternative Point of View

“…A short anneal (<60 s) at 400°C to 500°C led to a significant increase in electrical activity to $10 17 cm -3 , which corresponded with a decrease in the concentration of As-H pairs. Clerjaud et al 69 showed that more hydrogen was incorporated in the As-doped than the undoped part of the structure. The same group also determined that the H in undoped CdTe was coming from the MOVPE precursors.…”

Acceptor Neutralisation by Hydrogen in GaN and Wide Band Gap II-VI Materials

“…These results have been obtained either in OMVPE grown samples in which hydrogen was non intentional [11,17,18,20,21] or in samples in which hydrogen had been intentionally introduced either during the MBE growth [16] or by exposition to a hydrogen or deuterium radio frequency plasma [19]. In the case of arsenic in ZnSe, deuterium had been also substituted to hydrogen as the carrier gas and in this case, the deuterium related mode has also been reported [21].…”

“…2 as an example [20]. In the cases of 500 CdTe : As Te 2022 stretching [11] the nitrogen acceptor in ZnSe and CdTe, a transverse mode of the complex has been seen in addition to the stretching mode. All of the transitions reported in Table 1 have been observed by infrared spectroscopy.…”

“…It was subsequently shown [11] that in a CdTe structure grown by OMVPE consisting of an undoped layer covered by an arsenic doped layer, the hydrogen concentration was higher in the As doped part than in the undoped part of the structure.…”

“…The first report of the LVM associated with a shallow acceptor± hydrogen complex concerned the arsenic-hydrogen complex in CdTe [11]. It has been observed in OMVPE grown samples.…”