2015
DOI: 10.1007/s11468-015-0013-4
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Hybrid Graphene Oxide and NTC Semiconductor Material Absorbs and Transform Light Energy via a Novel Surface Nanoscale Plasmon Mechanical

Abstract: Graphene oxide (GO) was prepared using the improved Hummer method, and mono-dispersed manganese cobalt nickel oxide (MCN) semiconductor nanometer particles were synthesized and coated with GO. Under 980-nm infrared laser excitation, this novel hybrid material demonstrated nanometer-scale surface plasmon resonance. The same mechanism has previously only been reported in good conductors. Although the MCN semiconductor is a negative temperature coefficient material, it can realize the same effect as a good conduc… Show more

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Cited by 2 publications
(2 citation statements)
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“…The carrier electrons in crystals will be scattered 10 12 -10 13 times per second, but because of the high electron mobility in graphene, electron scattering is strongly reduced. However, the electron space density of graphene is so large that diffusion is not the main effect [18,[20][21][22][23][24] and the electrons behave like a two-dimensional electronic fluid [25].…”
Section: Discussionmentioning
confidence: 99%
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“…The carrier electrons in crystals will be scattered 10 12 -10 13 times per second, but because of the high electron mobility in graphene, electron scattering is strongly reduced. However, the electron space density of graphene is so large that diffusion is not the main effect [18,[20][21][22][23][24] and the electrons behave like a two-dimensional electronic fluid [25].…”
Section: Discussionmentioning
confidence: 99%
“…The Schottky contact barrier model is widely used to explain the interface carrier transport mechanism, which is generally based on thermionic emission. Although electron diffusion also occurs, the main contact mechanism between graphene and MCN is dominated by quantum tunneling because of the zero mass electrons of graphene ( Figure 2 ) [ 22 ].…”
Section: Discussionmentioning
confidence: 99%