Hybrid fullband cellular automaton/Monte Carlo approach for fast simulation of charge transport in semiconductors

Saraniti, Marco; Goodnick, Stephen M.

doi:10.1109/16.870571

Cited by 94 publications

(62 citation statements)

References 20 publications

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“…However, the large amount of memory required by the transition table results in a trade-off between memory and accuracy of the final state energy. This issue was addressed by the implementation of an hybrid EMC/CMC method [3].…”

Section: Methods Descriptionmentioning

confidence: 99%

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Full‐band particle‐based simulation of SOI and GOI MOSFETs

Beysserie

Aboud

Goodnick

et al. 2004

Physica Status Solidi (b)

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In this work we report on the 2D simulation of fully depleted Germanium-On-Insulator FET structures coupled with a high-j dielectric using a full-band simulator. This simulator, based on the Cellular Monte Carlo method, provides an accurate transport model at the high electric fields present in the ultra-small devices considered in this work. Simulations of similar Germanium-and Silicon-On-Insulator devices have been performed to quantitatively analyze the predicted increase in performance of Germanium-On-Insulator technology. A characterization and comparison of the static behavior of these devices is presented for 50 nm MOSFETs.

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Section: Methods Descriptionmentioning

confidence: 99%

“…The simulation tool used in this work is a full-band particlebased simulator based on the Cellular Monte Carlo (CMC) method [3,4], it provides an accurate and efficient model for the charge transport in the nanoscale devices of interest in this work.…”

Section: Introductionmentioning

confidence: 99%

Full‐band particle‐based simulation of SOI and GOI MOSFETs

Beysserie

Aboud

Goodnick

et al. 2004

Physica Status Solidi (b)

View full text Add to dashboard Cite

show abstract

“…The memory required to store the transition probability tables is negligible compared to the already existing cost of storing the scattering tables within the full band Cellular Monte Carlo (CMC) scheme. 2 The algorithm described above, and the results presented in Section III, apply to the case of Monte Carlo simulations under a uniform electric field (so-called k-space simulation). However, the look-up table approach can be generalized to different fields as well, with the size of the look-up table still much less than the scattering tables used in the CMC algorithm.…”

Section: Implementation Of the Ki Equation Solution Within The Monmentioning

confidence: 99%

“…The traditional method requires the calculation and storage of the band structure of the material on the full Brillouin zone (BZ). This is done through various methods such as the k•p method, 1 the Empirical Pseudopotential method (EPM), 2 the empirical Tight Binding method (ETB), 3 etc. The calculation of the scattering rate is usually done using Fermi's golden rule for every initial state k to final state k 0 .…”

Section: Introductionmentioning

confidence: 99%

Modeling of multi-band drift in nanowires using a full band Monte Carlo simulation

Hathwar

Saraniti

Goodnick

2016

Journal of Applied Physics

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We report on a new numerical approach for multi-band drift within the context of full band Monte Carlo (FBMC) simulation and apply this to Si and InAs nanowires. The approach is based on the solution of the Krieger and Iafrate (KI) equations [J. B. Krieger and G. J. Iafrate, Phys. Rev. B 33, 5494 (1986)], which gives the probability of carriers undergoing interband transitions subject to an applied electric field. The KI equations are based on the solution of the time-dependent Schr€ odinger equation, and previous solutions of these equations have used Runge-Kutta (RK) methods to numerically solve the KI equations. This approach made the solution of the KI equations numerically expensive and was therefore only applied to a small part of the Brillouin zone (BZ). Here we discuss an alternate approach to the solution of the KI equations using the Magnus expansion (also known as "exponential perturbation theory"). This method is more accurate than the RK method as the solution lies on the exponential map and shares important qualitative properties with the exact solution such as the preservation of the unitary character of the time evolution operator. The solution of the KI equations is then incorporated through a modified FBMC freeflight drift routine and applied throughout the nanowire BZ. The importance of the multi-band drift model is then demonstrated for the case of Si and InAs nanowires by simulating a uniform field FBMC and analyzing the average carrier energies and carrier populations under high electric fields. Numerical simulations show that the average energy of the carriers under high electric field is significantly higher when multi-band drift is taken into consideration, due to the interband transitions allowing carriers to achieve higher energies. Published by AIP Publishing.

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“…The solution of semiclassical BTE is carried out by a variety of methods [14][15][16][17][18][19][20][21][22][23][24][25][26], among which the iterative methods [15], the matrix methods [16], the Monte Carlo method [17][18][19][20][21], the cellu lar automata method [22], truncated expansion (usually in Legendre polynomials and spherical harmonics) methods [23][24][25][26]. In addition, the so-called energy transport model (ETM) and mo ment methods [27], which are somet imes called the hydrodynamic model (HDM), have been also used to solve the BT E in the hot carrier regime.…”

Section: Introductionmentioning

confidence: 99%

Yet Another Hydrodynamic Model with Correlated Parameters for Silicon Devices

El-Saba¹

2013

MSSE

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In this paper we present a complete hydrodynamic model (HDM) describing the transport of charge carriers in semiconductor devices with arbitrary band structure. The model is appended with advanced physical models fo r almost all the physical parameters of interest in modern Si Devices. These parameters are inter-related v ia the carrier energy relaxation time. An improved analytical model of the carrier heat flu x, on the basis of a fourth mo ment of the Bolt zmann transport equation (BTE), is also presented. In order to resolve the heat evacuation problems in SOI and power devices, the model is coupled with a lattice heat conservation equation. The transport of hot carriers is simu lated, according to the proposed HDM and the results are compared with the conventional data obtained using the drift-diffusion model (DDM) and MC simu lation. We show from the HD simu lation, the effect of the energy relaxat ion time value on the hot carrier transport in general and the breakdown voltage in particu lar, of both MOSFETs and bipolar devices.

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Hybrid fullband cellular automaton/Monte Carlo approach for fast simulation of charge transport in semiconductors

Cited by 94 publications

References 20 publications

Full‐band particle‐based simulation of SOI and GOI MOSFETs

Full‐band particle‐based simulation of SOI and GOI MOSFETs

Modeling of multi-band drift in nanowires using a full band Monte Carlo simulation

Yet Another Hydrodynamic Model with Correlated Parameters for Silicon Devices

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