2008
DOI: 10.1016/j.snb.2007.10.002
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Humidity response of Li-substituted magnesium ferrite

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Cited by 112 publications
(60 citation statements)
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“…The high-frequency band (� 1 ) lies in the 580-600 cm �1 range and the low-frequency band (� 2 ) in the 400-436 cm -1 range. This difference in the band position is attributed to the vibration of tetrahedral and octahedral components in the spinel ferrites [16,18,19].…”
Section: Humidity Measurementsmentioning
confidence: 96%
See 1 more Smart Citation
“…The high-frequency band (� 1 ) lies in the 580-600 cm �1 range and the low-frequency band (� 2 ) in the 400-436 cm -1 range. This difference in the band position is attributed to the vibration of tetrahedral and octahedral components in the spinel ferrites [16,18,19].…”
Section: Humidity Measurementsmentioning
confidence: 96%
“…Aggregation of smaller grains was observed with the formation of lesser pores. The SEM micrographs exhibited some dissolved ferrites that precipitated during cooling to form barely resolvable particles that had insufficient time to migrate to grain boundaries [16].…”
Section: Scanning Electron Microscopymentioning
confidence: 99%
“…3 showes the infrared feature of LiYO 2 which displays a broad band at around 3450 cm -1 related to the O-H stretching vibration mode of water [27]. The presence of O-H vibration for sample heated at 1000˚C is due to the moisture sensitive of Li + ion [28]. A closer examination of frequency bands at 3075, 2642 and 2540 cm -1 and the typical vibration at 1715 cm -1 indicates that the shoulder exists around 3000-2800 cm -1 could be attributed to the stretching vibrations of C-H and COO-H vibration of citric acid, which proves that no complexes were formed even after 125 hours.…”
Section: Ft-ir Characterization Of Liyomentioning
confidence: 96%
“…Increase (for p-type) or decrease (for n-type) of the resistance is attri buted to desorption of chemisorbed water [19]. Adsorption of water traps e -from metal oxide semiconductor conduction or valence band in case of n-type or p-type semiconductor according to the equation H 2 O + e -↔ OH - [20]. Desorption at higher temperatures returns e -and hence increases (p-type) or decreases (n-type) resistance of the material OH --e -↔ H 2 O [20].…”
mentioning
confidence: 99%
“…Adsorption of water traps e -from metal oxide semiconductor conduction or valence band in case of n-type or p-type semiconductor according to the equation H 2 O + e -↔ OH - [20]. Desorption at higher temperatures returns e -and hence increases (p-type) or decreases (n-type) resistance of the material OH --e -↔ H 2 O [20]. Desorption of chemisorbed water will promote oxygen adsorption and enhance sensitivity [21].…”
mentioning
confidence: 99%