Hot carrier degradation of InGaZnO thin film transistors under light illumination at the elevated temperature

Thermal analysis of amorphous oxide thin-film transistor degraded by combination of joule heating and hot carrier effect

“…Simultaneously, a high vertical electrical field is generated in the depletion region near the drain region; thus, electrons gain a high energy from a high electric field and flow into the depletion region. 12,13 Then, these carriers induce impact ionization and generate a hole-electron pair; 14 consequently, the electrons are trapped at the local interface between the channel and the gate insulator near the drain region, while the holes are trapped at the interface between the back channel and the passivation layer. Therefore, it seems that the electrical properties related to V th and drain current were deteriorated by the hole and electron trapping phenomena.…”

Temperature-dependent field-effect measurements method to illustrate the relationship between negative bias illumination stress stability and density of states of InZnO-TFTs with different channel layer thickness

“…Under the light illumination, electron-hole pairs would be generated by light in the channel region. The photo-generated electrons added to the channel electrons result in the drain current increasing [24] . In particular, the transfer characteristic for various active layer thicknesses is shifted toward the negative direction as the gate bias stress time increases with no apparent change in SS and the field-effect mobility, which suggests that charge trapping rather than defect creation in the channel layer is the dominant degradation reason.…”

The effect of gate overlap on the device degradation in IGZO thin film transistors

“…The device instability of IGZO TFTs was intensively studied under both positive and negative gate bias stress [6,7]. And the drain bias induced hot carrier effect on the device degradation was also reported recently [8]. Although the effect of gate overlap lightly doped drain on low temperature poly-Si thin film transistor was addressed [9], there is no profound study on the effect of L OV on the device degradation in IGZO TFTs within our knowledge.…”