Hole Transport in Poly(phenylene vinylene)/Methanofullerene Bulk‐Heterojunction Solar Cells

Melzer, Christian; Koop, E. J.; Mihailetchi, V.D.; Blom, Paul W. M.

doi:10.1002/adfm.200305156

Cited by 393 publications

(320 citation statements)

References 25 publications

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“…The validity of our approach is further corroborated by the injection barrier values found in this procedure. The obtained hole injection barriers ͑ PEDOT ͒ agree well with literature values in the range of 0 -0.1 eV for the PEDOT:PSS/MDMO-PPV interface, 6,13 and 0.8-1 eV for the PEDOT:PSS/PCBM interface. 6,13,14 The low electron injection barriers ͑ Al and LiF/Al ͒ found for the interfaces with PCBM also agree well with earlier measurements.…”

supporting

confidence: 84%

Temperature-dependent built-in potential in organic semiconductor devices

Kemerink

Kramer

Gommans

et al. 2006

Applied Physics Letters

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The temperature dependence of the built-in voltage of organic semiconductor devices is studied. The results are interpreted using a simple analytical model for the band bending at the electrodes. It is based on the notion that, even at zero current, diffusion may cause a significant charge density in the entire device, and hence a temperature dependent band bending. Both magnitude and temperature dependence of the built-in potential of various devices are consistently described by the model, as the effects of a thin LiF layer between cathode and active layer.

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supporting

confidence: 84%

Temperature-dependent built-in potential in organic semiconductor devices

Kemerink

Kramer

Gommans

et al. 2006

Applied Physics Letters

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“…In contrast, in MDMO-PPV:PCBM blends (weight ratio 1:4) the hole mobility in MDMO-PPV is increased up to 1Á4 Â 10 À4 cm 2 /Vs and the electron mobility in PCBM is 2 Â 10 À3 cm 2 /Vs. 21,22 Clearly, in MDMO-PPV: PCNEPV blends the electron and hole mobilities are significantly lower as compared to the values found in MDMO-PPV:PCBM blend. The low mobilities may affect the performance of the device.…”

Section: Charge Collection (H CC )mentioning

confidence: 81%

Nanoscale structure of solar cells based on pure conjugated polymer blends

Veenstra

Loos

Kroon

2007

Progress in Photovoltaics

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This paper gives an overview of the status of photovoltaic devices based on blends of semiconducting polymers. The polymer blends form the bulk heterojunction in these photovoltaic devices. The fundamental mechanisms governing the performance of these devices are discussed as well as the specificities of these all-polymer solar cells. The morphology of the polymer blend layer is expected to influence the device performance of these bulk heterojunctions. An overview is presented of factors that influence the morphology of the active layer of polymer blend photovoltaic devices together with a summary of tools available to study the structure of this layer. An advanced electron microscopy technique is applied to study the morphology of polymer blends of MDMO-PPV and PCNEPV with differing molecular weights. It is shown that the molecular weight of the polymer influences the typical domain size from $200 nm down to less than 5 nm in these bulk heterojunction PV devices. No strong relation is observed between the typical length scale of the phase separated domains and the measured external quantum efficiency, indicating that the phases are intermixed.

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“…TAS is a well-established, effective technique for characterizing both shallow and deep defects, which has been broadly applied in understanding defects in thin film 27,28 and organic solar cells 29 . The energetic profile of trap density of states (tDOS) can be derived from the angular frequency dependent capacitance using the equation: 30…”

Section: Discussionmentioning

confidence: 99%

Origin and elimination of photocurrent hysteresis by fullerene passivation in CH3NH3PbI3 planar heterojunction solar cells

et al. 2014

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The large photocurrent hysteresis observed in many organometal trihalide perovskite solar cells has become a major hindrance impairing the ultimate performance and stability of these devices, while its origin was unknown. Here we demonstrate the trap states on the surface and grain boundaries of the perovskite materials to be the origin of photocurrent hysteresis and that the fullerene layers deposited on perovskites can effectively passivate these charge trap states and eliminate the notorious photocurrent hysteresis. Fullerenes deposited on the top of the perovskites reduce the trap density by two orders of magnitude and double the power conversion efficiency of CH 3 NH 3 PbI 3 solar cells. The elucidation of the origin of photocurrent hysteresis and its elimination by trap passivation in perovskite solar cells provides important directions for future enhancements to device efficiency.

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Hole Transport in Poly(phenylene vinylene)/Methanofullerene Bulk‐Heterojunction Solar Cells

Abstract: Hole transport in poly(phenylene vinylene)/methanofullerene bulk-heterojunction solar cells Melzer, C.; Koop, E.J.; Mihailetchi, V.D.; Blom, P.W.M.

Cited by 393 publications

References 25 publications

Temperature-dependent built-in potential in organic semiconductor devices

Temperature-dependent built-in potential in organic semiconductor devices

Nanoscale structure of solar cells based on pure conjugated polymer blends

Origin and elimination of photocurrent hysteresis by fullerene passivation in CH3NH3PbI3 planar heterojunction solar cells

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