1982
DOI: 10.1109/isscc.1982.1156308
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S. Liu, Chao-Hsiang Fu, G. Atwood, J. Langston, E. Hazani, Haiping Dun, I. Beinglass, S. Sachdev, K. Fuchs

Abstract: THE SCALING of the MOS transistors has been exercised over the past few years, first in 1977l and then in 19792, to achieve dramatic improvement in device performance without the necessity of reducing the supply voltage. Continuing the effort in this direction, a third-generation high-performance NMOS technology, namely HMOS III, has been developed. By integrating state-of-the-art processing capabilities, the technology offers enhancement in both density and performance over its predecessors.For processing si…

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