Highly sensitive organic near-infrared phototransistors based on poly(3-hexylthiophene) and PbS quantum dots

Sun, Zhenhua; Li, Jinhua; Yan, Feng

doi:10.1039/c2jm34773c

Cited by 67 publications

(72 citation statements)

References 36 publications

(60 reference statements)

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“…The separation of light absorption and field-effect charge transport effectively expands the selection of light sensitizers and consequently offers great potential for broadband or long wavelength light detection. [164] A maximum R of 2 × 10 4 A W −1 is obtained at 895 nm. [44] Peng et al adopted an organic small molecule sensitizer layer on top of CuPc phototransistors.…”

Section: Hybrid Phototransistormentioning

confidence: 91%

Organic Field‐Effect Transistor for Energy‐Related Applications: Low‐Power‐Consumption Devices, Near‐Infrared Phototransistors, and Organic Thermoelectric Devices

Ren

Yang

Gao

et al. 2018

Advanced Energy Materials

106

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The operating frequency of ring oscillators or radio-frequency identification tags made by OFETs have surpassed MHz. [27,28] With the growing level of integration and the operating frequency of OFETs, the power dissipation issue can no longer be ignored. Considering the material composition of most organic semiconductors, controlling the temperature rise within a reasonable range is important to avoid the unwanted degradation of organic materials and therefore maintain stable device operation. In addition, OFETs fabricated on flexi ble substrates somehow limit the use of conventional batteries. To avoid externally wiring the batteries, flexible OFET-based circuits can be expected to be self-powered by integrating them with organic solar cells, thermoelectric modules, or triboelectric nanogenerators. [29,30] All of these demands require OFETs operating with extremely low power consumption. Rapid progress has been made in this field, and research efforts have focused on reducing the operating voltage of OFETs, [31][32][33] enhancing the switching efficiency of transistors, [34][35][36][37] and demonstrating several novel device concepts for low-power applications. [38][39][40][41][42] Despite the switching function, OFETs can also be utilized in emerging energy-related applications, such as near-infrared (NIR) photodetectors and organic thermoelectric devices dueThe organic field-effect transistor (OFET) is the basic building block of integrated circuits. The charge carrier mobility and operating frequency of OFETs have continued to increase; therefore, the power dissipation of OFETs can no longer be ignored. Many research efforts have been made to develop low-power-consumption OFETs and complementary circuits. Despite the switching function, OFETs can also be utilized in emerging energy-related applications, such as near-infrared (NIR) photodetectors and organic thermoelectric devices. Organic phototransistors show considerably higher photo responsivity than other photodetector architectures due to field-effect charge modulation. The photoinduced gate modulating largely suppresses the dark current while simultaneously providing gain. These characteristics may favor NIR light detection and suggest that the organic phototransistor is a promising candidate for optoelectronic applications in the NIR regime. For organic thermoelectric applications, OFETs can work as a powerful tool for examining the charge and energy transport in the organic semiconductor, thus giving insight into organic thermoelectric studies. In this review, the authors highlight recent advances in OFET-related energy topics, including lowpower-consumption OFETs, NIR photodetectors, and organic thermoelectric devices. The remaining challenges in the field will also be discussed.

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Section: Hybrid Phototransistormentioning

confidence: 91%

Organic Field‐Effect Transistor for Energy‐Related Applications: Low‐Power‐Consumption Devices, Near‐Infrared Phototransistors, and Organic Thermoelectric Devices

Ren

Yang

Gao

et al. 2018

Advanced Energy Materials

106

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“…Similar phenomena have also been observed in organic semiconductors and PbS QD blend device. 44 Figure 3e shows the maximum values of R (R max ) as a function of the illumination wavelength in the spectral region of 1400-700 nm, which range between 670 and 3600 A W −1 . These values are comparable to or even better than the values of the PbS QD-based NIR photodetecting devices 8 or the 2D nanosheet-based phototransistors 45,46 previously reported in the literature.…”

Section: Phototransistor Characteristicsmentioning

confidence: 99%

Ultrasensitive PbS quantum-dot-sensitized InGaZnO hybrid photoinverter for near-infrared detection and imaging with high photogain

et al. 2016

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Lead sulfide (PbS) quantum dots (QDs) have great potential in optoelectronic applications because of their desirable characteristics as a light absorber for near-infrared (NIR) photodetection. However, most PbS-based NIR photodetectors are two-terminal devices, which require an integrated pixel circuit to be practical photosensors. Here we report on PbS QD/indium gallium zinc oxide (InGaZnO, IGZO) metal oxide semiconductor hybrid phototransistors with a photodetection capability between 700 and 1400 nm, a range that neither conventional Si nor InGaAs photodetectors can cover. The new hybrid phototransistor exhibits excellent photoresponsivity of over 10 6 A W − 1 and a specific detectivity in the order of 10 13 Jones for NIR (1000 nm) light. Furthermore, we demonstrate an NIR (1300 nm) imager using photogating inverter pixels based on PbS/IGZO phototransistors at an imaging frequency of 1 Hz with a high output voltage photogain of~4.9 V (~99%). To the best of our knowledge, this report demonstrates the first QD/metal oxide hybrid phototransistor-based flat panel NIR imager. Our hybrid approach using QD/metal oxide paves the way for the development of gate-tunable and highly sensitive flat panel NIR sensors/ imagers that can be easily integrated.

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“…Under 100 V bias, NIR photoresponsivity was as high as 10 4 A/W. 13 Yan's group and Konstantato et al both reported LH-FEpTs based on a graphene and PbS colloidal QD hybrid with ultrahigh responsivity of 10 7 A/W. 14,15 Theoretically, the responsivity (R ph ) of a thin film photoconductor is expressed as R ph ¼ enlEW/P, where e is the electronic charge, n is the photo-induced carrier density per unit area, l is carrier mobility, E is the applied electric field, P is the incident optical power, and W is the device width.…”

mentioning

confidence: 99%

“…Both types of FEpT show decreasing channel current with increasing light irradiation due to the light-gate effect. 13,14,21 The physical light-sensing mechanism is described as follows. Under illumination, photo-induced excitons are generated in the PbS QDs.…”

mentioning

confidence: 99%

Bulk- and layer-heterojunction phototransistors based on poly [2-methoxy-5-(2′-ethylhexyloxy-p-phenylenevinylene)] and PbS quantum dot hybrids

Song

Zhang

Wang

et al. 2015

Applied Physics Letters

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The responsivity (R) of a thin film photodetector is proportional to the product of its photo-induced carrier density (n) and mobility (μ). However, when choosing between layer heterojunction (LH) and bulk heterojunction (BH) field-effect phototransistors (FEpTs), it is still unclear which of the two device structures is more conducive to photodetection. A comparison study is performed on the two structures based on polymer and PbS quantum dot hybrids. Both devices exhibit ambipolar behavior, with μE ≈ μH = 3.7 cm2 V−1 s−1 for BH-FEpTs and μH = 36 cm2 V−1 s−1 and μE = 52 cm2 V−1 s−1 for LH-FEpTs. Because of the improvements in μ and the channel order degree (α), the responsivity of LH-FEpTs is as high as 101 A/W, which is as much as two orders of magnitude higher than that of BH-FEpTs (10−1A/W) under the same conditions. Although the large area of the BH improves both the exciton separation degree (β) and n in the BH-FEpT, the lack of an effective transport mechanism becomes the main constraint on high device responsivity. Therefore, LH-FEpTs are better candidates for use as photo detectors, and a “three-high” principle of high α, β, and μ is found to be required for high responsivity.

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Highly sensitive organic near-infrared phototransistors based on poly(3-hexylthiophene) and PbS quantum dots

Cited by 67 publications

References 36 publications

Organic Field‐Effect Transistor for Energy‐Related Applications: Low‐Power‐Consumption Devices, Near‐Infrared Phototransistors, and Organic Thermoelectric Devices

Organic Field‐Effect Transistor for Energy‐Related Applications: Low‐Power‐Consumption Devices, Near‐Infrared Phototransistors, and Organic Thermoelectric Devices

Ultrasensitive PbS quantum-dot-sensitized InGaZnO hybrid photoinverter for near-infrared detection and imaging with high photogain

Bulk- and layer-heterojunction phototransistors based on poly [2-methoxy-5-(2′-ethylhexyloxy-p-phenylenevinylene)] and PbS quantum dot hybrids

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