Highly reliable 198-nm light source for semiconductor inspection based on dual fiber lasers

Imai, Shinichi; Matsuki, Kazuto; Kikuiri, Nobutaka; Takayama, Katsuhiko; Iwase, O.; Urata, Yoshiharu; Shinozaki, Tatsuya; Wada, Yoshio; Wada, Satoshi

doi:10.1117/12.840467

Cited by 9 publications

(5 citation statements)

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“…olid-state ultraviolet (UV) lasers that employ frequency conversion are attractive for high-resolution inspection and advanced material processing. 1,2) CsLiB 6 O 10 (CLBO) is an excellent nonlinear optical crystal for generating high-power UV output with wavelengths below 300 nm. [3][4][5] For high-repetition-rate pulsed lasers with a wavelength of 266 nm, we have recently found that UV output degradation and beam distortion in CLBO occurred at a lower peak power density than the bulk laser-induced damage threshold (LIDT).…”

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Al Doping of CsLiB₆O₁₀for High Resistance to Ultraviolet-Induced Degradation

Takachiho

Yoshimura

Fukushima

et al. 2013

Appl. Phys. Express

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We investigated the ultraviolet-induced degradation of a nonlinear optical crystal CsLiB6O10 (CLBO). High-repetition-rate pulsed lasers with an output wavelength of 266 nm induced degradation of CLBO at a lower peak power density than the bulk laser-induced damage threshold. This degradation behavior is similar to photorefractive damage. We found for the first time that Al-doped CLBO heated at 150 °C exhibits a longer lifetime for the degradation than undoped CLBO.

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confidence: 99%

Al Doping of CsLiB₆O₁₀for High Resistance to Ultraviolet-Induced Degradation

Takachiho

Yoshimura

Fukushima

et al. 2013

Appl. Phys. Express

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“…1,2) Among these, a 198 nm light source is implemented in the leading-edge photomask inspection machine. 3) Furthermore, short-wavelength VUV sources below 190 nm are expected for future mask inspection tools. A 177.3 nm light generated with KBe 2 BO 3 F 2 (KBBF) has been reported.…”

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Phase-Matching Properties at around 190 nm of Various Borate Crystals

Yoshimura

Tsunoda

et al. 2012

Appl. Phys. Express

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We report on the phase-matching properties of borate crystals of LiB3O5 (LBO), CsB3O5 (CBO), and CsLiB6O10 (CLBO) in vacuum–ultraviolet (VUV) light generation at around 190 nm. A new phase-matching property in the VUV spectral range for CBO grown from a self-flux solution was found to have better agreement with new Sellmeier's equations developed in our laboratory. A 189 nm output of 11.4 mW was produced in a CLBO with a conversion efficiency of 7.3% from 213 nm input. CLBO is suitable for VUV light generation around 190 nm with the present laser system.

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“…All-solid-state laser generated 198-nm wavelength light has been reported for application in photomask inspection in semiconductor manufacturing [1]. As the node size becomes smaller, the inspection source below 190 nm is expected for achieving higher resolution.…”

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confidence: 99%