Highly efficient grating coupler between optical fiber and silicon photonic circuit

Selvaraja, Shankar Kumar; Vermeulen, Diedrik; Schaekers, Marc; Sleeckx, Erik; Bogaerts, Wim; Roelkens, Günther; Dumon, Pieter; Thourhout, Dries Van; Baets, Roel

doi:10.1364/cleo.2009.ctuc6

Cited by 67 publications

(50 citation statements)

References 5 publications

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“…The corresponding bandwidths of the surface relief gratings fabricated alongside the implanted versions were measured to be 30nm and 51nm respectively, which is comparable to uniform surface relief gratings published in the literature [15,35]. The implanted structures perform comparably with surface relief gratings as expected.…”

Section: Resultssupporting

confidence: 80%

Planar surface implanted diffractive grating couplers in SOI

Topley¹,

О’Faolain²,

Thomson³

et al. 2014

Opt. Express

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Grating couplers are used to efficiently couple light from an optical fibre to a silicon waveguide as they allow light to be coupled into or out from any location on the device without the need for cleaving. However, using the typical surface relief grating fabrication method reduces surface planarity and hence makes further processing more difficult. The ability to manufacture high quality material layers on top of a grating coupler allows multiple active optical layers to be realized for multi-layer integrated optical circuits, and may enable monolithic integration of optical and electronic circuits on separate layers. Furthermore, the nature of the refractive index change may enable removal via rapid thermal annealing for wafer scale testing applications. We demonstrate for the first time a coupling device utilising a refractive index change introduced by lattice disorder. Simulations show 44% of the power can be extracted from the waveguide by using uniform implanted gratings, which is not dissimilar to the performance of typical uniform surface relief gratings currently used. Losses determined empirically, of 5.5dB per coupler have been demonstrated. 5958-5964 (1997). 32. G. F. Cembali, P. G. Merli, and F. Zignani, "Self-annealing of ion-implanted silicon: First experimental results," Appl. Phys. Lett. 38(10), 808-810 (1981 75-77 (2008).

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Section: Resultssupporting

confidence: 80%

Planar surface implanted diffractive grating couplers in SOI

Topley¹,

О’Faolain²,

Thomson³

et al. 2014

Opt. Express

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“…It is worthwhile to mention here that Si 3 N 4 is a deposited material and therefore it is possible to further boost the efficiency by depositing a metallic mirror [2] or distributed Bragg reflectors (DBRs) underneath the grating to boost the reflection of the downward radiated light [5], [12]. Figure 8 (top) depicts a design for a DBR reflector consisting of three alternating stacks of Si 3 N 4 (112.5 nm) and SiO 2 (115 nm) of different thickness.…”

Section: Resultsmentioning

confidence: 99%

Near-Infrared Grating Couplers for Silicon Nitride Photonic Wires

Subramanian

Selvaraja

Verheyen

et al. 2012

IEEE Photon. Technol. Lett.

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Abstract-Silicon nitride is a promising high-index material for dense photonic circuits and applications in the visiblemidinfrared wavelength regime. Design, fabrication, and optical characterization of silicon nitride waveguides at visible-nearinfrared wavelength are presented. Finally, design and experimental results are presented for the first time for linear and focused grating couplers (GCs) at near-infrared wavelength (900 nm) for plasma-enhanced chemical vapor deposition silicon nitride wires (220 × 500 nm) and compared with theoretical simulations. An experimental efficiency of 5.7 and 6.5 dB and 1-dB bandwidth of 26 and 40 nm are reported for the linear and focused GCs, respectively.

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“…When setting the minimum width at the taper tip to 800 nm (because of fabrication constrains) and the etch depth to 270 nm (as for the presented amplifiers), the optimized channel cross-section at the fiber-chip interface has dimensions of 800 × 325 nm 2 and a fiber-chip coupling efficiency of 76.9% (1.15 dB loss) is calculated at λ = 1533 nm. This value is a significant improvement over the 19% reported above for the non-optimized device and is even higher than the 69.5% coupling efficiency currently achieved in SOI grating couplers [33]. Moreover, the wavelength dependence of taper-based couplers is due mainly to the material dispersion.…”

Section: Discussionmentioning

confidence: 56%

Monolithic integration of erbium-doped amplifiers with silicon-on-insulator waveguides

Agazzi¹,

Bradley²,

Dijkstra³

et al. 2010

Opt. Express

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100

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Monolithic integration of Al 2 O 3 :Er 3+ amplifier technology with passive silicon-on-insulator waveguides is demonstrated. A signal enhancement of >7 dB at 1533 nm wavelength is obtained. The straightforward wafer-scale fabrication process, which includes reactive cosputtering and subsequent reactive ion etching, allows for parallel integration of multiple amplifier and laser sections with silicon or other photonic circuits on a chip.

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Highly efficient grating coupler between optical fiber and silicon photonic circuit

Abstract: we report on a highly efficient grating coupler between an optical fiber and a silicon photonic circuit. Using layers of Si/SiO2 as a Bragg mirror and amorphous Si we have measured a coupling efficiency of 69.5%.

Cited by 67 publications

References 5 publications

Planar surface implanted diffractive grating couplers in SOI

Planar surface implanted diffractive grating couplers in SOI

Near-Infrared Grating Couplers for Silicon Nitride Photonic Wires

Monolithic integration of erbium-doped amplifiers with silicon-on-insulator waveguides

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