Highly-anisotropic optical and electrical properties in layered SnSe

Yang, Shengxue; Liu, Yuan; Wu, Minghui; Zhao, Li‐Dong; Lin, Zhaoyang; Cheng, Horng Long; Wang, Yiliu; Jiang, Chengbao; Wei, Su‐Huai; Huang, Li; Huang, Yu; Duan, Xiangfeng

doi:10.1007/s12274-017-1712-2

Cited by 125 publications

(138 citation statements)

References 33 publications

Supporting

Mentioning

130

Contrasting

Unclassified

Order By: Relevance

“…On the other hand, monolayer SnSe has remarkable anisotropy in the linear optical absorption, with a stronger response to the polarization along the armchair direction, and structural transformations driven by linearly polarized laser pulses might exist as suggested by theoretical calculations . Notably, few‐layer SnSe FETs also show a large current ON/OFF ratio (≈2 × 10 7 ) and the highest anisotropic ratio in the mobility (≈5.8) among all the reported 2D anisotropic materials . These significant properties equip SnSe with great potential in various electronic and optoelectronic applications, including solar cells, infrared optoelectronic devices, radiation detectors, polarity‐dependent memory switching devices, artificial synaptic devices, and spin‐transport devices .…”

Section: Introductionmentioning

confidence: 91%

“…For example, the ZT factor of SnSe reaches its maximum value (2.6 ± 0.3) along the zigzag direction at 923 K, but significantly reduces to the minimum value (0.8 ± 0.2) along the axis vertical to the (100) plane . On the other hand, monolayer SnSe has remarkable anisotropy in the linear optical absorption, with a stronger response to the polarization along the armchair direction, and structural transformations driven by linearly polarized laser pulses might exist as suggested by theoretical calculations . Notably, few‐layer SnSe FETs also show a large current ON/OFF ratio (≈2 × 10 7 ) and the highest anisotropic ratio in the mobility (≈5.8) among all the reported 2D anisotropic materials .…”

Section: Introductionmentioning

confidence: 97%

“…Regarded as a promising alternative to BP, SnSe also consists of a puckered honeycomb layered crystal structure similar to that in BP, exhibiting highly anisotropic valence bands, a crystal‐orientation‐dependent high charge carrier mobility (≈10 3 cm 2 V −1 s −1 ), and linear optical absorption . Additionally, due to the narrow‐bandgap semiconductor nature, the indirect bandgap of SnSe is ≈0.9 eV, whereas its direct bandgap is ≈1.3 eV, leading to optical transitions of SnSe in the range from the near‐infrared to the visible region. Also, like many similar layered materials, SnSe films of definite atomic thickness can be produced by exfoliation or epitaxial growth .…”

Section: Introductionmentioning

confidence: 99%

“…These significant properties equip SnSe with great potential in various electronic and optoelectronic applications, including solar cells, infrared optoelectronic devices, radiation detectors, polarity‐dependent memory switching devices, artificial synaptic devices, and spin‐transport devices . Thus far, the exploration of anisotropic properties in 2D SnSe has focused on thermoelectric properties, first‐principles theoretical calculations, linear optical absorption, Raman scattering, and electrical transport characteristics . However, the polarization‐dependent nonlinear optical absorption has rarely been explored.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Anisotropic Nonlinear Optical Properties of a SnSe Flake and a Novel Perspective for the Application of All‐Optical Switching

Zhang

Ouyang

Miao

et al. 2019

Advanced Optical Materials

View full text Add to dashboard Cite

applications, [4,[17][18][19] and therefore have aroused enthusiasm in researchers. Due to their high crystal structure symmetry, graphene, which has been well studied, and most TMDCs exhibit an inplane isotropic feature. However, a few 2D materials with a surprisingly low lattice symmetry, such as BP, tin selenide (SnSe), [20][21][22][23] gallium telluride (GaTe), [24] and rhenium disulfide (ReS 2 ), [17,[25][26][27][28] can also show significant anisotropic in-plane optical, electrical, and thermal properties. [17,20,[23][24][25]28] For instance, the charge carrier mobility, [18,29] photoemission, [30] and thermoelectric figure of merit (ZT) [31][32][33] of BP along the armchair direction are larger than those in the zigzag direction. In addition to anisotropy, BP also has a tunable thickness-dependent direct bandgap ranging from 0.3 to 1.5 eV, [12,13] filling the space between zero-gap graphene [1,2] and large-gap (1-2.5 eV) TMDCs. [4,34] Additionally, BP has a high carrier mobility (≈10 3 cm 2 V −1 s −1 ) [18] compared with TMDCs (10-200 cm 2 V −1 s −1 ). [4] Therefore, BP has been viewed as an alluring and ideal candidate for applications in field-effect transistors (FETs), [18,35] fast-response optical switches, [36] photovoltaic devices, [37] mid-infrared polarizers, and polarization sensors, [29] owing to its distinguished physical properties. Although BP exhibits great potential for various anisotropic optical, electronic, and optoelectronic high-performance devices, it degrades within a short time when exposed to oxygen and water vapor in air, causing difficulties in practical applications. Consequently, it is highly important to explore BP-like materials with appropriate properties including a narrow bandgap, high carrier mobility, air stability, and low cost.Regarded as a promising alternative to BP, SnSe also consists of a puckered honeycomb layered crystal structure similar to that in BP, exhibiting highly anisotropic valence bands, [23] a crystal-orientation-dependent high charge carrier mobility (≈10 3 cm 2 V −1 s −1 ), [38] and linear optical absorption. [39] Additionally, due to the narrow-bandgap semiconductor nature, the indirect bandgap of SnSe is ≈0.9 eV, [39][40][41][42] whereas its direct bandgap is ≈1.3 eV, [40,42] leading to optical transitions of SnSe The deceptively simple tin selenide (SnSe) film has emerged as an appealing 2D material with a narrow bandgap, high charge carrier mobility, and significant thermoelectric figure of merit. In particular, compared with most commonly investigated 2D materials, SnSe with a puckered honeycomb structure possesses a lower lattice symmetry, resulting in prominent in-plane anisotropy. Herein, with polarization-dependent Raman spectroscopy and polarization-dependent nonlinear absorption measurements, pronounced polarization-dependent nonlinear optical properties of a SnSe flake are demonstrated originating from the anisotropic optical transition probability of SnSe, which is confirmed by ultrafast polarization-dependent pump-probe experiments. Furt...

show abstract

Section: Introductionmentioning

confidence: 91%

Section: Introductionmentioning

confidence: 97%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Anisotropic Nonlinear Optical Properties of a SnSe Flake and a Novel Perspective for the Application of All‐Optical Switching

Zhang

Ouyang

Miao

et al. 2019

Advanced Optical Materials

View full text Add to dashboard Cite

show abstract

“…To explore the mechanism for the thickness dependence of the local thermal conductivity of SnS nanosheets, the Raman spectras were further measured, as shown in Figure . Four strong Raman peaks at 70, 105, 130, and 150 cm −1 are clearly observed (Figure a), which correspond to the

A_{normalg}^{1}

B_{3 g}

A_{normalg}^{2}

, and

A_{normalg}^{3}

modes, respectively . These four low‐frequency optical branch modes reflect the low symmetry structure of SnSe.…”

mentioning

confidence: 91%

Nanoscale Thermal Behavior of 2D SnSe Nanosheets

Liu

Zeng

et al. 2019

Physica Rapid Research Ltrs

View full text Add to dashboard Cite

The thickness‐dependent nanoscale thermal behaviors of 2D SnSe nanosheets are studied via 3ω thermal mode atomic force microscopy and local Raman spectra. It is found that the 2D SnSe nanosheets demonstrate a decreasing thermal behavior with the reduction of thickness in the range of 6–40 nm. The unique thermal behavior is ascribed to the nonharmonic interlayer coupling along the armchair direction of SnSe crystal structure, in which the redshift of in‐plane vibration (Anormalg2, B3g) gives rise to phonon softening and finally the thickness‐dependent thermal behavior of SnSe nanosheets. Such nanoscale thermal behavior provides a new insight to understand the local thermal transport of 2D materials and their applications in energy consumption.

show abstract

Highly In‐Plane Optical and Electrical Anisotropy of 2D Germanium Arsenide

Yang

et al. 2018

Adv Funct Materials

136

154

View full text Add to dashboard Cite

Anisotropic 2D materials exhibit unique optical, electrical, and thermoelectric properties that open up possibilities for diverse angle‐dependent devices. However, the explored anisotropic 2D materials are very limited and the methods to identify the crystal orientations and to study the in‐plane anisotropy are in the initial stage. Here azimuth‐dependent reflectance difference microscopy (ADRDM), angle‐resolved Raman spectra, and electrical transport measurements are used to systematically characterize the influence of the anisotropic structure on in‐plane optical and electrical anisotropy of 2D GeAs, a novel group IV–V semiconductor. It is proved that ADRDM offers a way to quickly identify the crystal orientations and also to directly characterize the in‐plane optical anisotropy of layered GeAs. The anisotropic electrical transport behavior of few‐layer GeAs field‐effect transistors is further measured and the anisotropic ratio of the mobility is as high as 4.6, which is higher than the other 2D anisotropic materials such as black phosphorus. The dependence of the Raman intensity anisotropy on the sample thickness, excitation wavelength, and polarization configuration is investigated both experimentally and theoretically. These data will be useful for designing new high‐performance devices and the results suggest a general methodology for characterizing the in‐plane anisotropy of low‐symmetry 2D materials.

show abstract

Highly-anisotropic optical and electrical properties in layered SnSe

Cited by 125 publications

References 33 publications

Anisotropic Nonlinear Optical Properties of a SnSe Flake and a Novel Perspective for the Application of All‐Optical Switching

Anisotropic Nonlinear Optical Properties of a SnSe Flake and a Novel Perspective for the Application of All‐Optical Switching

Nanoscale Thermal Behavior of 2D SnSe Nanosheets

Highly In‐Plane Optical and Electrical Anisotropy of 2D Germanium Arsenide

Contact Info

Product

Resources

About