High voltage GaN Schottky rectifiers

Dang, G.; Zhang, A.P.; Ren, F.; Cao, X. A.; Pearton, S. J.; Cho, H.; Han, Jung; Chyi, Jen‐Inn; Lee, C.-M.; Chuo, Chang-Cheng; Chu, S. N. G.; Wilson, R. G.

doi:10.1109/16.830981

Cited by 85 publications

(42 citation statements)

References 18 publications

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“…Due to its unipolar nature, a Schottky diode does not exhibit the minority carrier storage effect, thus faster switching speed and less reverse recovery current can be achieved with Schottky diodes compared to p-n junction diodes. Due to the poor availability of bulk GaN substrates, GaN-based Schottky rectifiers have been fabricated using GaN films epitaxially grown on foreign substrates such as sapphire [11][12][13][14][15][16][17]. Zhang et al has reported a record V B value of 6350 V for Schottky rectifiers fabricated laterally on GaN epitaxial layer grown on sapphire [17].…”

Section: Introductionmentioning

confidence: 99%

High breakdown voltage Schottky rectifier fabricated on bulk n-GaN substrate

Zhou

Wang

Ahyi

et al. 2006

Solid-State Electronics

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Section: Introductionmentioning

confidence: 99%

High breakdown voltage Schottky rectifier fabricated on bulk n-GaN substrate

Zhou

Wang

Ahyi

et al. 2006

Solid-State Electronics

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“…Impressive high voltage operation of AlGaN/GaN field effect transistors (FETs) and GaN-based rectifiers continue to be reported [1]- [3]. However, no GaN-based heterojunction bipolar transistors (HBTs) with operation voltage higher than 100 V have been presented.…”

Section: Introductionmentioning

confidence: 99%

Very high voltage operation (>330 V) with high current gain of AlGaN/GaN HBTs

Xing

Chavarkar²,

Keller

et al. 2003

IEEE Electron Device Lett.

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Abstract-N-p-n Al 0 05 GaN/GaN heterojunction bipolar transistors with a common emitter operation voltage higher than 330 V have been demonstrated using selectively regrown emitters. Devices were grown by metalorganic chemical vapor deposition on sapphire substrates. The n-type emitter was grown selectively on a 100-nm-thick p-base with an 8 m n-collector structure using a dielectric mask. The shallow etch down to the collector mitigates damages induced in the dry etch, resulting a low leakage and a high breakdown. The graded AlGaN emitter results in a common emitter current gain of 18 at an average collector current density of up to 1 kA cm 2 at room temperature.

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“…Some of them include [87][88][89][90][91] † The lack of native oxide in GaN restricts production of GaN MOS devices. However, SiC uses SiO 2 as a native oxide.…”

Section: Silicon Carbide Against Gallium Nitridementioning

confidence: 99%

Integrated motor drives: state of the art and future trends

2017

IET Electric Power Applications

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With increased need for high power density, high efficiency and high temperature capabilities in aerospace and automotive applications, integrated motor drives (IMD) offers a potential solution. However, close physical integration of the converter and the machine may also lead to an increase in components temperature. This requires careful mechanical, structural and thermal analysis; and design of the IMD system. This study reviews existing IMD technologies and their thermal effects on the IMD system. The effects of the power electronics position on the IMD system and its respective thermal management concepts are also investigated. The challenges faced in designing and manufacturing of an IMD along with the mechanical and structural impacts of close physical integration is also discussed and potential solutions are provided. Potential converter topologies for an IMD like the matrix converter, two-level bridge, three-level neutral point clamped and multiphase full bridge converters are also reviewed. Wide band gap devices like silicon carbide and gallium nitride and their packaging in power modules for IMDs are also discussed. Power modules components and packaging technologies are also presented. IntroductionOver the last two decades there has been a shift from traditional physically separated motor and drive systems to more compact, power dense, motor-drive combinations [1]. This new power-dense motor-drive structure combines both the motor and its associated control and drive circuitry within a single enclosure. The earliest records of commercially available motor-drive systems were manufactured by Grundfos in 1991 and Franz Morat KG in 1993 [2].These compact systems have been called a variety of names from 'smart motors' to 'integrated motors', the latter forming the foundation for the new moniker currently identified with these systems [3]. The term 'integrated motor drive (IMD)' is the latest associated with this class of products and is as a result of the success of a TB Woods Inc. manufactured motor-drive registered under the same name [3].IMDs are increasingly being developed and produced by machine manufacturers due to the significant potential benefits they offer. The most significant of these benefits include direct replacement of inefficient direct on line motors, increased power density, lower losses and lower costs compared with separate motor and drive solutions. Technological advancements over the last decade have led to the development of robust electronic components able to withstand the harsh environments required by some forms of integration [4]. By eliminating separate enclosures and long cable runs, the integrated approach promises to lower system costs by 20 to 40% [5].Elimination of transmission cables has economic advantages, including increased reliability due to the removal of the output filter commonly required for long cables. Removal of long cable runs and integration into a single package will also significantly reduce potential electromagnetic interference (EMI). This a...

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High voltage GaN Schottky rectifiers

Cited by 85 publications

References 18 publications

High breakdown voltage Schottky rectifier fabricated on bulk n-GaN substrate

High breakdown voltage Schottky rectifier fabricated on bulk n-GaN substrate

Very high voltage operation (>330 V) with high current gain of AlGaN/GaN HBTs

Integrated motor drives: state of the art and future trends

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