High-voltage 4H-SiC PiN diodes with the etched implant junction termination extension

Li, Juntao; Xiao, Chengquan; Xu, Xingliang; Dai, Gang; Zhang, Lin; Zhou, Yang; An, Xiang; Yang, Yingkun; Zhang, Jian

doi:10.1088/1674-4926/38/2/024003

Cited by 4 publications

(2 citation statements)

References 6 publications

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“…PiN diodes feature a higher breakdown voltage than SBDs, which makes PiN diodes suitable for power electronic applications provided that high-speed switching is unnecessary. The edge termination in PiN diode is also necessary to realize high-voltage robustness, such as a region of 4.5 kV or higher [21], [22]. To obtain large power regulations, a vertical device structure is widely used in SiC owing to its lower material cost compared with gallium nitride (GaN), which exhibits a higher cost and features a lateral device structure on a silicon substrate [31].…”

Section: A 4h-silicon Carbide Power Diodesmentioning

confidence: 99%

Mechanical Stress Effects on 4H-Silicon Carbide Power Diodes

Sugiura,

Yamashita,

Nakano

2024

IEEE Open J. Power Electron.

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This paper discusses the effect of stress on 4H-silicon carbide (4H-SiC) power diodes using numerical simulations. Two power diodes, a 600 V PiN diode and 1.8 kV junction barrier Schottky (JBS) diode, are evaluated. On PiN diode of bipolar diode, stress changes the carrier mobilities in the material; that is, the mobility is enhanced by the piezoresistive effect, which works as the minimized on-resistance or leak current. Simulation results show that compressive stress can have a positive effect on device operation, particularly in p + -substrate power diodes. For JBS diode, the GPa-order tensile stress brings good effects to both the forward and the reversed characteristics. Using the cantilever structure is suitable for JBS diode, and press-pack packaging for PiN diodes have the potential to enhance the device characteristics.

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Section: A 4h-silicon Carbide Power Diodesmentioning

confidence: 99%

Mechanical Stress Effects on 4H-Silicon Carbide Power Diodes

Sugiura,

Yamashita,

Nakano

2024

IEEE Open J. Power Electron.

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“…age tended to saturation due to the edge electric field concentration of the JTE when LM exceeded 20 μm. The electric field within the main JTE region could rise steadily with increased voltage while ensuring that the edge peak electric field was protected due to the addition of the AR [34,35] .…”

Section: Research On Pin Diode Terminal Structures In Chinamentioning

confidence: 99%

A review of the etched terminal structure of a 4H-SiC PiN diode

Zhou,

Yan,

et al. 2023

J. Semicond.

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The comparison of domestic and foreign studies has been utilized to extensively employ junction termination extension (JTE) structures for power devices. However, achieving a gradual doping concentration change in the lateral direction is difficult for SiC devices since the diffusion constants of the implanted aluminum ions in SiC are much less than silicon. Many previously reported studies adopted many new structures to solve this problem. Additionally, the JTE structure is strongly sensitive to the ion implantation dose. Thus, GA-JTE, double-zone etched JTE structures, and SM-JTE with modulation spacing were reported to overcome the above shortcomings of the JTE structure and effectively increase the breakdown voltage. They provided a theoretical basis for fabricating terminal structures of 4H-SiC PiN diodes. This paper summarized the effects of different terminal structures on the electrical properties of SiC devices at home and abroad. Presently, the continuous development and breakthrough of terminal technology have significantly improved the breakdown voltage and terminal efficiency of 4H-SiC PiN power diodes.

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